NTD4904NT4G ON Semiconductor

NTD4904N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 79 A Features NTD4904N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.9 C/W JC JunctiontoTab (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 1) R 57 JA JunctiontoAmbient Steady State (Note 2) R 108 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V m I = 30 A 3.0 3.7 DS(on) GS D I = 15 A 3.0 D V = 4.5 V I = 30 A 4.0 5.5 GS D I = 15 A 4.0 D Forward Transconductance gFS V = 1.5 V, I = 30 A 76 S DS D CHARGES AND CAPACITANCES pF Input Capacitance C 3052 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 976 oss V = 15 V DS Reverse Transfer Capacitance C 23 rss nC Total Gate Charge Q 16.8 G(TOT) Threshold Gate Charge Q 4.4 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 8.2 GS GatetoDrain Charge Q 3.0 GD Total Gate Charge Q V = 10 V, V = 15 V, 41 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 15.3 d(on) Rise Time t 19.8 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 TurnOff Delay Time t D G 23.4 d(off) Fall Time t 7.5 f TurnOn Delay Time t 10.3 ns d(on) Rise Time t 20 r V = 10 V, V = 15 V, GS DS I = 15 A, R = 3.0 TurnOff Delay Time t D G 28.7 d(off) Fall Time t 8.0 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.