X-On Electronics has gained recognition as a prominent supplier of NTD4965N-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4965N-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4965N-1G ON Semiconductor

NTD4965N-1G electronic component of ON Semiconductor
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Part No.NTD4965N-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 17.8A 3-Pin(3+Tab) IPAK Rail
Datasheet: NTD4965N-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
379: USD 0.102 ea
Line Total: USD 38.66 
Availability - 0
MOQ: 379  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2151
25 : USD 0.1314
100 : USD 0.0982
500 : USD 0.0793
1000 : USD 0.0758
2500 : USD 0.0734
5000 : USD 0.071

0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 379
Multiples : 1
379 : USD 0.102
500 : USD 0.0793
1000 : USD 0.0758
2500 : USD 0.0734
5000 : USD 0.071

   
Manufacturer
Product Category
Packaging
Channel Mode
Operating Temp Range
Pin Count
Continuous Drain Current
Number Of Elements
Power Dissipation
Package Type
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Polarity
Type
Drain-Source On-Volt
Mounting
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD4965N-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4965N-1G and other electronic components in the MOSFETs category and beyond.

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NTD4965N Power MOSFET 30 V, 68 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4965N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 3.9 C/W  JC Junction toTAB (Drain) R 4.3 JCTAB JunctiontoAmbient Steady State (Note 3) R 57.6 JA JunctiontoAmbient Steady State (Note 4) R 107.6 JA 3. Surfacemounted on FR4 board using 1 sq in pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 21.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.1 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 3.4 4.7 DS(on) GS D I = 15 A 3.4 D m V = 4.5 V I = 30 A 5.4 10 GS D I = 15 A 5.3 D Forward Transconductance g V = 1.5 V, I = 30 A 52 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1710 ISS Output Capacitance C 664 V = 0 V, f = 1.0 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 340 RSS Total Gate Charge Q 17.2 G(TOT) Threshold Gate Charge Q 2.7 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 5.1 GS GatetoDrain Charge Q 8.5 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 28.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12.1 d(ON) Rise Time t 34.2 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0  D G Turn Off Delay Time t 18.9 d(OFF) Fall Time t 14.2 f 5. Pulse Test: pulse width  300 s, duty cycle  2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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