X-On Electronics has gained recognition as a prominent supplier of NTD4963NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4963NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4963NT4G ON Semiconductor

NTD4963NT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD4963NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 30V 44A 9.6MOHM
Datasheet: NTD4963NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2137: USD 0.1757 ea
Line Total: USD 375.47 
Availability - 0
MOQ: 2137  Multiples: 2137
Pack Size: 2137
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.1919
5000 : USD 0.1884

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2137
Multiples : 2137
2137 : USD 0.1757

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD4963NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4963NT4G and other electronic components in the MOSFETs category and beyond.

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NTD4963N Power MOSFET 30 V, 44 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4963N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.1 C/W JC JunctiontoTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 3) R 77 JA JunctiontoAmbient Steady State (Note 4) R 118 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 25 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 8.2 9.6 DS(on) GS D I = 15 A 8.2 D m V = 4.5 V I = 30 A 13.6 16 GS D I = 15 A 13.6 D Forward Transconductance g V = 1.5 V, I = 30 A 40 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1035 ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 12 V 220 pF OSS GS DS Reverse Transfer Capacitance C 115 RSS Total Gate Charge Q 8.1 G(TOT) Threshold Gate Charge Q 1.2 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 3.5 GS GatetoDrain Charge Q 3.5 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 d(ON) Rise Time t 20 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 3 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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