X-On Electronics has gained recognition as a prominent supplier of NTD4909N-35G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4909N-35G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4909N-35G ON Semiconductor

NTD4909N-35G electronic component of ON Semiconductor
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Part No.NTD4909N-35G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET DPAK 30V 41A 8.0 mOhm
Datasheet: NTD4909N-35G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1886
Multiples : 1886
1886 : USD 0.2301
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6085
10 : USD 0.4462
100 : USD 0.2803
1000 : USD 0.2166
2500 : USD 0.1845
10000 : USD 0.1835
25000 : USD 0.1803
50000 : USD 0.177
100000 : USD 0.1695
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the NTD4909N-35G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4909N-35G and other electronic components in the MOSFETs category and beyond.

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NTD4909N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features Low R to Minimize Conduction Losses NTD4909N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.1 C/W JC JunctiontoTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.2 JA JunctiontoAmbient Steady State (Note 4) R 110 JA 3. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS V = 0 V, J GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.5 8.0 m DS(on) GS D I = 15 A 6.5 D V = 4.5 V I = 30 A 9.5 12 GS D I = 15 A 9.5 D Forward Transconductance gFS V = 1.5 V, I = 30 A 52 S DS D CHARGES AND CAPACITANCES Input Capacitance C 1314 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 487 oss V = 15 V DS Reverse Transfer Capacitance C 17.4 rss nC Total Gate Charge Q 7.6 G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 4.3 GS GatetoDrain Charge Q 1.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 17.5 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 21 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 17 d(off) Fall Time t 2.7 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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