NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single NChannel, DPAK/IPAK
Features
Trench Technology
Low R to Minimize Conduction Losses
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DS(on)
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
V R MAX I MAX
(BR)DSS DS(ON) D
NVD Prefix for Automotive and Other Applications Requiring
4.7 m @ 10 V
25 V
89 A
Unique Site and Control Change Requirements; AECQ101
6.8 m @ 4.5 V
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
D
Applications
VCORE Applications
NChannel
G
DCDC Converters
Low Side Switching
S
4
MAXIMUM RATINGS (T = 25C unless otherwise stated)
J
4
Parameter Symbol Value Unit
4
DraintoSource Voltage V 25 V
DSS
GatetoSource Voltage V 20 V 1
GS
2
1 1
2
2
Continuous Drain T = 25C I 16.8 A 3 3 3
A D
Current R
JA 3 IPAK
DPAK IPAK
T = 85C 13.0
A
(Note 1)
CASE 369AC
CASE 369AA CASE 369D
Power Dissipation T = 25C P 2.14 W (Straight Lead)
(Bent Lead) (Straight Lead
A D
R (Note 1)
JA STYLE 2 DPAK) STYLE 2
Continuous Drain T = 25C ID 13.3 A
A
MARKING DIAGRAMS
Current R
JA
T = 85C 10.3
Steady
A
(Note 2) & PIN ASSIGNMENTS
4
State
Power Dissipation T = 25C P 1.33 W Drain
A D
4
4
R (Note 2)
JA
Drain
Drain
Continuous Drain T = 25C I 89 A
C D
Current R
JC
T = 85C 69
(Note 1) C
Power Dissipation T = 25C P 60 W
C D
R (Note 1)
JC
2
Pulsed Drain T = 25C I 179 A
t =10s
p A DM
1 2 3
Drain
1 3
Current
Gate Drain Source
Gate Source
1 2 3
Current Limited by Package T = 25C I 45 A
A DmaxPkg Gate Drain Source
Operating Junction and Storage T , 55 to C
J
A = Assembly Location*
Temperature T +175
STG
Y = Year
Source Current (Body Diode) I 50 A WW = Work Week
S
4856N = Device Code
Drain to Source dV/dt dV/dt 6 V/ns
G = PbFree Package
Single Pulse DraintoSource Avalanche EAS 180.5 mJ
* The Assembly Location Code (A) is front side
Energy (T = 25C, V = 50 V, V = 10 V,
J DD GS
optional. In cases where the Assembly Location is
I = 19 A , L = 1.0 mH, R = 25
L pk G
stamped in the package bottom (molding ejecter
Lead Temperature for Soldering Purposes T 260 C
L
pin), the front side assembly code may be blank.
(1/8 from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be
See detailed ordering and shipping information in the package
assumed, damage may occur and reliability may be affected.
dimensions section on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2014
1 Publication Order Number:
April, 2017 Rev. 4 NTD4856N/D
AYWW
48
56NG
AYWW
48
56NG
AYWW
48
56NGNTD4856N, NVD4856N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctiontoCase (Drain) R 2.5 C/W
JC
JunctiontoTAB (Drain) R 3.5
JC TAB
JunctiontoAmbient Steady State (Note 1) R 70
JA
JunctiontoAmbient Steady State (Note 2) R 113
JA
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 25 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V / 23
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0
DSS GS J
V = 20 V A
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 V
GS(TH)
GS DS D
Negative Threshold Temperature V /T 5.9
GS(TH) J
mV/C
Coefficient
DraintoSource On Resistance R V = 10 V I = 30 A 3.9 4.7
DS(on) GS D
m
V = 4.5 V I = 30 A 5.3 6.8
GS D
Forward Transconductance g V = 1.5 V, I = 15 A 73 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 2241
ISS
Output Capacitance C 567
V = 0 V, f = 1.0 MHz, V = 12 V pF
OSS GS DS
Reverse Transfer Capacitance C 279
RSS
Total Gate Charge Q 18 27
G(TOT)
Threshold Gate Charge Q 3.4
G(TH)
V = 4.5 V, V = 15 V, I = 30 A nC
GS DS D
GatetoSource Charge Q 6.7
GS
GatetoDrain Charge Q 6.6
GD
Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 38 nC
G(TOT) GS DS D
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 15.7
d(ON)
Rise Time t 22.5
r
V = 4.5 V, V = 15 V,
GS DS
ns
I = 15 A, R = 3.0
D G
TurnOff Delay Time t 18.6
d(OFF)
Fall Time t 7.5
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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