Green
DMTH3004LK3Q
30V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I Max
D
BV R Max
DSS DS(ON)
Environments
T = +25C
C
High Conversion Efficiency
4m @V = 10V 75A
GS
30V
Low R Minimizes On-State Losses
DS(ON)
7m @V = 4.5V 75A
GS
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications Mechanical Data
This MOSFET is designed to meet the stringent requirements of Case: TO252 (DPAK)
automotive applications. It is qualified to AECQ101, supported by a Case Material: Molded Plastic, Green Molding Compound.
PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions Terminal Connections: See Diagram
DC-DC Converters Terminals: Matte Tin Finish. Solderable per MIL-STD-202, Method
BLDC Motor control 208
Reverse Polarity Protection Weight: 0.315 grams (Approximate)
Equivalent Circuit
Top View
Pin Out Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMTH3004LK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH3004LK3Q
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 30 V
VDSS
+20
Gate-Source Voltage V
V
GSS
-16
Steady State T = +25C 75
C
A
I
D
(Note 7) 75
T = +100C
C
Continuous Drain Current V = 10V
GS
Steady State T = +25C 21
A
I A
D
(Note 6) 15
T = +100C
A
Pulsed Drain Current (10s Pulse, Duty Cycle=1%) 105 A
I
DM
Maximum Continuous Body Diode Forward Current 75 A
I
S
Avalanche Current L=5mH 10.7 A
I
AS
Avalanche Energy L=5mH 287 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
107 W
Total Power Dissipation (Note 7) P
D
Thermal Resistance, Junction to Ambient (Note 6) 50 C/W
R
JA
Thermal Resistance, Junction to Case (Note 7) 1.4 C/W
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V
DSS DS GS
V = 24V, V = 0V
DS GS
Zero Gate Voltage Drain Current (Note 9) 10 A
I
DSS
T = +125C
A
V = +20V, V = 0V
GS DS
Gate-Source Leakage I 100 nA
GSS
V = -16V, V = 0V
GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1 1.7 3 V V = V , I = 250A
GS(TH) DS GS D
3.3 4 V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
5.5 7
V = 4.5V, I = 7A
GS D
Diode Forward Voltage 0.75 1 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 2,370 pF
C
ISS
V =15V, V = 0V,
DS GS
Output Capacitance 1,360 pF
C
OSS
f = 1MHz
240
Reverse Transfer Capacitance C pF
RSS
0.6
Gate Resistance R 0.15 1.5 V =0V, V = 0V, f = 1MHz
G DS GS
20
Total Gate Charge (V = 4.5V) Q nC
GS G
44
Total Gate Charge (V = 10V) Q nC
GS G
V = 15V, I =20A
DS D
7
Gate-Source Charge Q nC
GS
Gate-Drain Charge Q 8 nC
GD
Turn-On Delay Time 6.2 ns
t
D(ON)
Turn-On Rise Time 4.3 ns
t V = 15V, V = 10V,
R DD GS
Turn-Off Delay Time 21 ns R = 0.75, R = 3, I =20A
t L G D
D(OFF)
Turn-Off Fall Time 8 ns
t
F
Reverse Recovery Time 25 ns
t
RR
I =15A, di/dt=500A/s
F
37
Reverse Recovery Charge Q nC
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad)
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMTH3004LK3Q March 2016
Diodes Incorporated
www.diodes.com
Document number: DS38461 Rev. 1 - 2