X-On Electronics has gained recognition as a prominent supplier of NDF06N60ZH MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDF06N60ZH MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDF06N60ZH ON Semiconductor

NDF06N60ZH electronic component of ON Semiconductor
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See Product Specifications
Part No.NDF06N60ZH
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET 600V 6A 980
Datasheet: NDF06N60ZH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.3068
10 : USD 1.1643
100 : USD 0.9074
500 : USD 0.7496
1000 : USD 0.5918
N/A

Obsolete
0
MOQ : 50
Multiples : 50
50 : USD 0.5238
1050 : USD 0.4955
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.052
10 : USD 0.8919
100 : USD 0.6853
500 : USD 0.6053
1000 : USD 0.4858
2500 : USD 0.4858
10000 : USD 0.4784
25000 : USD 0.4636
50000 : USD 0.4487
N/A

Obsolete
0
MOQ : 1000
Multiples : 50
1000 : USD 0.6616
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Package Case
Brand
Continuous Drain Current
Drain Source Breakdown Voltage
Forward Transconductance Min
Gate Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NDF06N60ZH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDF06N60ZH and other electronic components in the MOSFETs category and beyond.

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NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 Features Low ON Resistance www.onsemi.com Low Gate Charge ESD DiodeProtected Gate 100% Avalanche Tested V ( T )R (MAX) 3 A DSS Jmax DS(ON) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 650 V 1.2 Compliant ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit NChannel DraintoSource Voltage V 600 V DSS D (2) Continuous Drain Current, R (Note 1) I 7.1 A JC D Continuous Drain Current I 4.5 A D T = 100C, R (Note 1) A JC Pulsed Drain Current, I 28 A DM G (1) V 10 V GS Power Dissipation, R P 35 W JC D GatetoSource Voltage V 30 V GS S (3) Single Pulse Avalanche Energy, L = 6.3 mH, E 113 mJ AS I = 6.0 A D ESD (HBM) (JESD22A114) V 3000 V esd RMS Isolation Voltage V 4500 V ISO (t = 0.3 sec., R.H. 30%, T = 25C) (Figure 13) A Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 Continuous Source Current (Body Diode) I 6.0 A S 3 Maximum Temperature for Soldering Leads T 260 C L NDF06N60ZG, NDF06N60ZH Operating Junction and T , T 55 to C J stg TO220FP Storage Temperature Range 150 CASE 221AH Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING AND MARKING INFORMATION 1. Limited by maximum junction temperature See detailed ordering, marking and shipping information on 2. I = 6.0 A, di/dt 100 A/ s, V BV , T = +150C SD DD DSS J page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NDF06N60Z/DNDF06N60Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) R 3.6 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 3. Insertion mounted ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, 0.6 V/C BV / DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 3.0 A R 0.98 1.2 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 3.0 A g 5.0 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 738 923 1107 pF iss Output Capacitance (Note 5) V = 25 V, V = 0 V, C 90 106 125 oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 15 23 30 rss (Note 5) Total Gate Charge (Note 5) Q 15.5 31 47 nC g GatetoSource Charge (Note 5) Q 3 6.3 9.5 gs V = 300 V, I = 6.0 A, DD D GatetoDrain (Miller) Charge Q 8 17 24.5 gd V = 10 V GS (Note 5) Plateau Voltage V 6.4 V GP Gate Resistance R 3.2 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 13 ns d(on) Rise Time t 17 r V = 300 V, I = 6.0 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 30 d(off) Fall Time t 28 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 6.0 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 338 ns rr V = 0 V, V = 30 V GS DD I = 6.0 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 2.0 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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