X-On Electronics has gained recognition as a prominent supplier of NDF11N50ZG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDF11N50ZG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDF11N50ZG ON Semiconductor

NDF11N50ZG electronic component of ON Semiconductor
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See Product Specifications
Part No.NDF11N50ZG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 500V 0.52 OHM TO- 220FP
Datasheet: NDF11N50ZG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5919
10 : USD 1.4185
100 : USD 1.106
500 : USD 0.9137
1000 : USD 0.7213
N/A

Obsolete
0
MOQ : 50
Multiples : 1
50 : USD 0.9301
100 : USD 0.7663
250 : USD 0.6259
1000 : USD 0.6143
N/A

Obsolete
0
MOQ : 583
Multiples : 188
583 : USD 0.769
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.3893
10 : USD 0.8921
100 : USD 0.7109
500 : USD 0.6477
1000 : USD 0.5664
2500 : USD 0.5393
10000 : USD 0.5326
25000 : USD 0.5157
50000 : USD 0.4987
N/A

Obsolete
0
MOQ : 23
Multiples : 1
23 : USD 0.876
100 : USD 0.7109
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDF11N50ZG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDF11N50ZG and other electronic components in the MOSFETs category and beyond.

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NDF11N50Z N-Channel Power MOSFET 500 V, 0.52 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 4.5 A DSS DS(ON) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 500 V Compliant 0.52 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF Unit D (2) DraintoSource Voltage V 500 V DSS Continuous Drain Current, R (Note 1) I 12 A JC D Continuous Drain Current I 7.4 A D T = 100C, R (Note 1) A JC G (1) Pulsed Drain Current, I 44 A DM t = 10 s P Power Dissipation, R P 39 W JC D S (3) GatetoSource Voltage V 30 V GS MARKING Single Pulse Avalanche E 420 mJ AS DIAGRAM Energy, I = 10 A D ESD (HBM) (JESD22A114) V 4000 V esd RMS Isolation Voltage V 4500 V ISO NDF11N50ZG (t = 0.3 sec., R.H. 30%, NDF11N50ZH T = 25C) (Figure 14) A TO220FP NDF11N50ZG Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns CASE 221AH or NDF11N50ZH MOSFET dV/dt dV/dt 60 V/ns AYWW Continuous Source Current (Body I 12 A S Gate Source Diode) Maximum Temperature for T 260 C L Soldering Leads Operating Junction and T , T 55 to 150 C Drain J stg Storage Temperature Range A = Location Code Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. G, H = PbFree, HalogenFree Package 1. Limited by maximum junction temperature 2. I 10.5 A, di/dt 200 A/ s, V BV , T 150C. d DD DSS J ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2015 Rev. 6 NDF11N50Z/DNDF11N50Z THERMAL RESISTANCE Parameter Symbol NDF11N50Z Unit JunctiontoCase (Drain) R 3.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 500 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, 0.6 V/C BV / DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 500 V, V = 0 V DS GS 125C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 4.5 A R 0.48 0.52 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 4.5 A g 7.7 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 1097 1375 1645 pF iss Output Capacitance (Note 5) C 132 166 199 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 30 40 50 rss (Note 5) Total Gate Charge (Note 5) Q 23 46 69 nC g GatetoSource Charge (Note 5) Q 4.5 8.7 13 gs V = 250 V, I = 10.5 A, DD D GatetoDrain (Miller) Charge Q 12.5 25 37.5 gd V = 10 V GS (Note 5) Plateau Voltage V 6.2 V GP Gate Resistance R 1.4 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 15 ns d(on) Rise Time t 32 r V = 250 V, I = 10.5 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 40 d(off) Fall Time t 23 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 10.5 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 310 ns rr V = 0 V, V = 30 V GS DD I = 10.5 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 2.5 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Insertion mounted 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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