X-On Electronics has gained recognition as a prominent supplier of NDS8425 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDS8425 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDS8425 ON Semiconductor

NDS8425 electronic component of ON Semiconductor
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See Product Specifications
Part No.NDS8425
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Channel MOSFET 2.5V Specified
Datasheet: NDS8425 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 1
2500 : USD 0.7814
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.5471
5000 : USD 0.5165
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3902
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.4457
5000 : USD 0.4457
7500 : USD 0.4457
10000 : USD 0.4457
N/A

Obsolete
0
MOQ : 442
Multiples : 442
442 : USD 0.9533
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.5308
10 : USD 1.575
100 : USD 1.2013
500 : USD 1.0149
1000 : USD 0.8617
2500 : USD 0.8171
5000 : USD 0.8099
10000 : USD 0.7985
N/A

Obsolete
0
MOQ : 66
Multiples : 1
66 : USD 1.0906
100 : USD 0.8981
250 : USD 0.8843
500 : USD 0.7947
1000 : USD 0.7032
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.5775
N/A

Obsolete
0
MOQ : 10
Multiples : 10
10 : USD 0.672
25 : USD 0.6438
50 : USD 0.6425
100 : USD 0.6411
250 : USD 0.6283
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the NDS8425 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDS8425 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NDS8425 NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 7.4 A, 20 V. R = 0.022 V = 4.5 V DS(ON) GS using ON Semiconductors advanced Power R = 0.028 V = 2.7 V DS(ON) GS Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate Fast switching speed charge for superior switching performance. These devices have been designed to offer exceptional Low gate charge (11nC typical) power dissipation in a very small footprint package. High performance trench technology for extremely low Applications R DS(ON) DC/DC converter High power and current handling capability in a widely Load switch used surface mount package D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS 8 I Drain Current Continuous (Note 1a) A D 7.4 Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RJA C/W R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS8425 NDS8425 13 12mm 2500 units Publication Order Number: 2001 Semiconductor Components Industries, LLC. NDS8425/D September-2017, Rev. 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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