NDPL070N10B Power MOSFET 100V, 10.8m , 70A, N-Channel This N-Channel Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with www.onsemi.com low gate charge driving or ultra low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 10.8 m 15V Low Gate Charge 100V 70A 12.8 m 10V High Speed Switching 100% Avalanche Tested Pb-Free and RoHS compliance ELECTRICAL CONNECTION N-Channel Applications D(2) Battery Protection Motor Drive Primary Side Switch Secondary Side Synchronous Rectification G(1) SPECIFICATION ABSOLUTE MAXIMUM RATINGS at Ta = 25 C (Note 1) S(3) Parameter SymbolValue Unit Drain to Source Voltage V 100V DSS Gate to Source Voltage V 20V MARKING GSS Drain Current (DC) I 70A D Drain Current (Pulse) I 280 DP A PW 10 s, duty cycle 1% Power Dissipation 2.1 P 070N10 D W Tc=25 C 72 Junction Temperature Tj 175 C LOT No. B Tstg 55 to +175 C TO-220-3L Storage Temperature Source Current (Body Diode) I 70A S Avalanche Energy (Single Pulse) (Note 2) E 82mJ AS Lead Temperature for Soldering T 260 C L Purposes, 3mm from Case for 10 Seconds Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should ORDERING INFORMATION not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping 2 : V =48V, L=100 H, I =30A (Fig.1) DD AV information on page 6 of this data sheet. Thermal Resistance Ratings Parameter SymbolValue Unit Junction to Case Steady State R 2.08 JC C/W Junction to Ambient (Note 3) R 71.4 JA Note 3 : Insertion mounted Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 0 NDPL070N10B/D NDPL070N10B ELECTRICAL CHARACTERISTICS at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 100 nA GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 2 4V GS DS D Forward Transconductance g V =10V, I=35A 50 S FS DS D R (on)1 I =35A, V=15V 9.0 10.8m Static Drain to Source On-State DS D GS Resistance R (on)2 I =35A, V=10V 9.8 12.8m DS D GS Input Capacitance Ciss 2,010 pF Output Capacitance Coss V =50V, f=1MHz 840 pF DS Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time t (on) 30 ns d Rise Time t 180 ns r See Fig.2 Turn-OFF Delay Time t (off) 55 ns d Fall Time t 40 ns f Total Gate Charge Qg 26 nC Gate to Source Charge Qgs V =48V, V =10V, I =70A 9 nC DS GS D Gate to Drain Miller Charge Qgd 8 nC Forward Diode Voltage V I =70A, V=0V 1.1 1.5 V SD S GS Reverse Recovery Time t 95 ns rr See Fig.3 Reverse Recovery Charge I =70A, V =0V, di/dt=100A/s Q S GS 240 nC rr Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V =48V V IN DD 10V D L 0V I =35A D V IN R =1.37 L 50 G V D OUT PW=10s NDPL070N10B S D.C.1% 10V V G 50 DD 0V NDPL070N10B S P.G 50 Fig.3 Reverse Recovery Time Test Circuit D NDPL070N10B L G S V DD Driver MOSFET www.onsemi.com 2