NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested 100% R Tested V ( T )R (MAX) 5 A DSS Jmax DS(ON) g These Devices are PbFree, Halogen Free/BFR Free and are RoHS 650 V 0.75 Compliant ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF Unit D (2) DraintoSource Voltage V 600 V DSS Continuous Drain Current, R (Note 1) I 10 A JC D Continuous Drain Current I 6.0 A D T = 100C, R (Note 1) A JC G (1) Pulsed Drain Current, I 40 A DM t = 10 s P Power Dissipation, R P 39 W JC D S (3) GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy E 300 mJ AS (L = 6.0 mH, I = 10 A) D ESD (HBM) (JESD22A114) V 3900 V esd RMS Isolation Voltage V 4500 V ISO (t = 0.3 sec., R.H. 30%, T = 25C) (Figure 13) A Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 3 Continuous Source Current (Body Diode) I 10 A S NDF10N60ZG Maximum Temperature for T 260 C L NDF10N60ZH Soldering Leads TO220FP CASE 221AH Operating Junction and T , T 55 to 150 C J stg Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING AND MARKING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information on assumed, damage may occur and reliability may be affected. page 6 of this data sheet. 1. Limited by maximum junction temperature. 2. I 10 A, di/dt 200 A/ s, V = 80% BV S DD DSS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 13 NDF10N60Z/DNDF10N60Z THERMAL RESISTANCE Parameter Symbol NDF10N60Z Unit JunctiontoCase (Drain) R 3.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 3. Insertion mounted ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Coeffi- Reference to 25C, 0.6 V/C BV / DSS cient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 5.0 A R 0.65 0.75 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 10 A g 7.9 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 1097 1373 1645 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance (Note 5) C 118 150 178 oss f = 1.0 MHz Reverse Transfer Capacitance (Note 5) C 20 35 50 rss Total Gate Charge (Note 5) Q 23 47 68 nC g GatetoSource Charge (Note 5) Q 5.0 9.0 14 gs V = 300 V, I = 10 A, DD D V = 10 V GS GatetoDrain (Miller) Charge (Note 5) Q 12 26 36 gd Plateau Voltage V 6.4 V GP Gate Resistance R 0.5 1.5 4.5 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 15 ns d(on) Rise Time t 31 r V = 300 V, I = 10 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 40 d(off) Fall Time t 23 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 10 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 395 ns rr V = 0 V, V = 30 V GS DD I = 10 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 3.0 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2