X-On Electronics has gained recognition as a prominent supplier of NDF10N60ZG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDF10N60ZG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDF10N60ZG ON Semiconductor

NDF10N60ZG electronic component of ON Semiconductor
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See Product Specifications
Part No.NDF10N60ZG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N Trench 600V 10A (Tc) 4.5V @ 100uA 750 mΩ @ 5A,10V TO-220FP RoHS
Datasheet: NDF10N60ZG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5142 ea
Line Total: USD 0.51 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5142

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 50
Multiples : 50
50 : USD 0.6937
100 : USD 0.6724
550 : USD 0.6583
1100 : USD 0.63

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 594
Multiples : 594
594 : USD 0.7085

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.379
10 : USD 1.1651
30 : USD 1.0453
100 : USD 0.9123
500 : USD 0.8525
1000 : USD 0.8256

   
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We are delighted to provide the NDF10N60ZG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDF10N60ZG and other electronic components in the MOSFETs category and beyond.

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NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested 100% R Tested V ( T )R (MAX) 5 A DSS Jmax DS(ON) g These Devices are PbFree, Halogen Free/BFR Free and are RoHS 650 V 0.75 Compliant ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF Unit D (2) DraintoSource Voltage V 600 V DSS Continuous Drain Current, R (Note 1) I 10 A JC D Continuous Drain Current I 6.0 A D T = 100C, R (Note 1) A JC G (1) Pulsed Drain Current, I 40 A DM t = 10 s P Power Dissipation, R P 39 W JC D S (3) GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy E 300 mJ AS (L = 6.0 mH, I = 10 A) D ESD (HBM) (JESD22A114) V 3900 V esd RMS Isolation Voltage V 4500 V ISO (t = 0.3 sec., R.H. 30%, T = 25C) (Figure 13) A Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 3 Continuous Source Current (Body Diode) I 10 A S NDF10N60ZG Maximum Temperature for T 260 C L NDF10N60ZH Soldering Leads TO220FP CASE 221AH Operating Junction and T , T 55 to 150 C J stg Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING AND MARKING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information on assumed, damage may occur and reliability may be affected. page 6 of this data sheet. 1. Limited by maximum junction temperature. 2. I 10 A, di/dt 200 A/ s, V = 80% BV S DD DSS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 13 NDF10N60Z/DNDF10N60Z THERMAL RESISTANCE Parameter Symbol NDF10N60Z Unit JunctiontoCase (Drain) R 3.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 3. Insertion mounted ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Coeffi- Reference to 25C, 0.6 V/C BV / DSS cient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 5.0 A R 0.65 0.75 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 10 A g 7.9 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 1097 1373 1645 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance (Note 5) C 118 150 178 oss f = 1.0 MHz Reverse Transfer Capacitance (Note 5) C 20 35 50 rss Total Gate Charge (Note 5) Q 23 47 68 nC g GatetoSource Charge (Note 5) Q 5.0 9.0 14 gs V = 300 V, I = 10 A, DD D V = 10 V GS GatetoDrain (Miller) Charge (Note 5) Q 12 26 36 gd Plateau Voltage V 6.4 V GP Gate Resistance R 0.5 1.5 4.5 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 15 ns d(on) Rise Time t 31 r V = 300 V, I = 10 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 40 d(off) Fall Time t 23 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 10 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 395 ns rr V = 0 V, V = 30 V GS DD I = 10 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 3.0 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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