NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V ( T )R (MAX) 2 A DSS Jmax DS(on) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Parameter Symbol NDF NDD Unit D (2) DraintoSource Voltage V 600 V DSS Continuous Drain Current R (Note 1) I 4.8 4.1 A JC D Continuous Drain Current R , T = I 3.0 2.6 A JC A D 100C (Note 1) G (1) Pulsed Drain Current, I 20 20 A DM V 10V GS Power Dissipation R P 30 83 W JC D S (3) GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy, I = 4.0 E 120 mJ D AS A ESD (HBM) (JESD22A114) V 3000 V esd RMS Isolation Voltage V 4500 V ISO (t = 0.3 sec., R.H. 30%, T = 25C) A (Figure 15) Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 Continuous Source Current I 4.0 A S 3 (Body Diode) NDF04N60ZG, NDF04N60ZH Maximum Temperature for Soldering T 260 C L TO220FP Leads CASE 221AH Operating Junction and T , T 55 to 150 C J stg 4 Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1 1. Limited by maximum junction temperature 1 2 3 2. I = 4.0 A, di/dt 100 A/ s, V BV , T = +150C SD DD DSS J 3 NDD04N60ZT4G NDD04N60Z1G DPAK IPAK CASE 369AA CASE 369D ORDERING AND MARKING INFORMATION See detailed ordering, marking and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2017 Rev. 10 NDF04N60Z/DNDF04N60Z, NDD04N60Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDF04N60Z R 4.2 C/W JC NDD04N60Z 1.5 JunctiontoAmbient Steady State (Note 3) NDF04N60Z R 50 JA (Note 4) NDD04N60Z 38 (Note 3) NDD04N60Z1 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1 sq. pad size (Cu area = 1.127 in sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, BV / 0.6 V/C DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 5) Static DraintoSource V = 10 V, I = 2.0 A R 1.8 2.0 GS D DS(on) OnResistance Gate Threshold Voltage V = V , I = 50 A V 3.0 3.9 4.5 V DS GS D GS(th) Forward Transconductance V = 15 V, I = 2.0 A g 3.3 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) C 427 535 640 pF iss Output Capacitance (Note 6) C 50 62 75 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 8 14 20 rss (Note 6) nC Total Gate Charge (Note 6) Q 10 19 29 g GatetoSource Charge (Note 6) Q 2 3.9 6 gs V = 300 V, I = 4.0 A, DD D V = 10 V GS GatetoDrain (Miller) Charge Q 5 10 15 nC gd Plateau Voltage V 6.5 V GP Gate Resistance R 4.7 g RESISTIVE SWITCHING CHARACTERISTICS ns TurnOn Delay Time t 13 d(on) Rise Time t 9.0 r V = 300 V, I = 4.0 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 24 d(off) Fall Time t 15 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 4.0 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 285 ns rr V = 0 V, V = 30 V GS DD I = 4.0 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 1.3 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width 380 s, Duty Cycle 2%. 6. Guaranteed by design. www.onsemi.com 2