X-On Electronics has gained recognition as a prominent supplier of BSP250.115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP250.115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP250.115 Nexperia

BSP250.115 electronic component of Nexperia
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Part No.BSP250.115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET SOT223 RoHS
BSP250.115 is a NPN bipolar switching transistors, suitable for high frequency switching and amplifying.
Datasheet: BSP250.115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1191 ea
Line Total: USD 1.12 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1191
5 : USD 0.7562
25 : USD 0.5712
34 : USD 0.4323
92 : USD 0.4092

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP250.115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP250.115 and other electronic components in the MOSFETs category and beyond.

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74HC The Nexperia 74HC BSP250.115 is a replacement field effect transistor that can be used in a wide range of applications. Its package contains a single N-channel MOSFET with an RDS(on) of 16 milliohms (max) and an operating temperature range of -40°C to +125°C. The device features a gate-source voltage (VGS) of 10V (max), an avalanche voltage (VDSS) of 30V (max) and a continuous drain current (ID) of 200mA (max). It has a maximum total gate charge (Qg) of 11nC and a maximum input capacitance (Ciss) of 38pF. This transistor can be used in circuits that require switching, amplification, and overvoltage protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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