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BSP50,115

BSP50,115 electronic component of Nexperia
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See Product Specifications
Part No. BSP50,115
Manufacturer: Nexperia
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor NPN - Darlington 45 V 1 A 200MHz 1.25 W Surface Mount SOT-223
Datasheet: BSP50,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.1648 ea
Line Total: USD 164.8

1940 - Global Stock
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
9 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8679
10 : USD 0.6768
50 : USD 0.4935
200 : USD 0.4394
500 : USD 0.3845

1940 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1000
Multiples : 1000
1000 : USD 0.1648

948 - WHS 3


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4309
10 : USD 0.342
30 : USD 0.3044
100 : USD 0.257
500 : USD 0.2372
1000 : USD 0.2253

14371 - WHS 4


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.4899
100 : USD 0.36
500 : USD 0.2887
1000 : USD 0.1897
2000 : USD 0.1828
10000 : USD 0.1817
50000 : USD 0.1782

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
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BSP52 NPN Darlington transistor 23 February 2018 Product data sheet 1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62 2. Features and benefits High current of 1 A Low voltage of 80 V Integrated diode and resistor AEC-Q101 qualified 3. Applications Industrial high gain amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 90 V CBO V collector-emitter base short-circuited to emitter - - 80 V CES voltage I collector current - - 1 A C I peak collector current - - 2 A CM h DC current gain V = 10 V I = 150 mA 1 1000 - - FE CE C 1 Pulse test: t 300 s 0.02. pNexperia BSP52 NPN Darlington transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector B 3 E emitter 1 2 3 4 C collector SC-73 (SOT223) E aaa-027580 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSP52 SC-73 plastic, surface-mounted package with increased heatsink 4 SOT223 leads 4.6 mm pitch 6.5 mm x 3.5 mm x 1.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BSP52 BSP52 BSP52 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 23 February 2018 2 / 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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