DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP60 BSP61 BSP62 PNP Darlington transistors Product data sheet 2001 May 31 Supersedes data of 1999 Apr 29NXP Semiconductors Product data sheet PNP Darlington transistors BSP60 BSP61 BSP62 FEATURES PINNING High current (max. 0.5 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diode and resistor. 2, 4 collector 3 emitter APPLICATIONS Industrial switching applications such as: 4 Print hammer 2, 4 Solenoid 1 Relay and lamp drivers. DESCRIPTION 12 3 PNP Darlington transistor in a SOT223 plastic package. 3 Top view MAM266 NPN complements: BSP50, BSP51 and BSP52. Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BSP60 60 V BSP61 80 V BSP62 90 V V collector-emitter voltage V = 0 CES BE BSP60 45 V BSP61 60 V BSP62 80 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 1 A C I peak collector current 2 A CM I base current (DC) 100 mA B P total power dissipation T 25 C note 1 1.25 W tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 2 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm . For other mounting conditions, see Thermal considerations for the SOT223 in the General Part of associated Handbook. 2001 May 31 2