Product Information

BSP60

BSP60 electronic component of NXP

Datasheet
TRANSISTOR, DARLINGTON, -45V, SOT223
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3342 ea
Line Total: USD 0.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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BSP60
NXP

1 : USD 0.3342
10 : USD 0.3175
100 : USD 0.2525
250 : USD 0.2245
500 : USD 0.217
1000 : USD 0.2087

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Msl
Svhc
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP60 BSP61 BSP62 PNP Darlington transistors Product data sheet 2001 May 31 Supersedes data of 1999 Apr 29NXP Semiconductors Product data sheet PNP Darlington transistors BSP60 BSP61 BSP62 FEATURES PINNING High current (max. 0.5 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diode and resistor. 2, 4 collector 3 emitter APPLICATIONS Industrial switching applications such as: 4 Print hammer 2, 4 Solenoid 1 Relay and lamp drivers. DESCRIPTION 12 3 PNP Darlington transistor in a SOT223 plastic package. 3 Top view MAM266 NPN complements: BSP50, BSP51 and BSP52. Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BSP60 60 V BSP61 80 V BSP62 90 V V collector-emitter voltage V = 0 CES BE BSP60 45 V BSP61 60 V BSP62 80 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 1 A C I peak collector current 2 A CM I base current (DC) 100 mA B P total power dissipation T 25 C note 1 1.25 W tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 2 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm . For other mounting conditions, see Thermal considerations for the SOT223 in the General Part of associated Handbook. 2001 May 31 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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