X-On Electronics has gained recognition as a prominent supplier of BSP60 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BSP60 Darlington Transistors are a product manufactured by NXP. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BSP60 NXP

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Part No.	BSP60
Manufacturer:	NXP
Category:	Darlington Transistors
Description:	TRANSISTOR, DARLINGTON, -45V, SOT223
Datasheet:	BSP60 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3235 ea
Line Total: USD 0.32

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSP60 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 0.3235 10 : USD 0.3074 100 : USD 0.2445 250 : USD 0.2174 500 : USD 0.2101 1000 : USD 0.202

Specifications

Manufacturer NXP NXP
Product Category Darlington Transistors Darlington Transistors
Transistor Polarity Dual Pnp Dual Pnp
Collector Emitter Voltage Vbrceo - 45 V - 45 V
Transition Frequency Ft 200 MHz 200 MHz
Power Dissipation Pd 1.25 W 1.25 W
Dc Collector Current - 1 A - 1 A
Dc Current Gain Hfe 1000hfe 1000hfe
Transistor Case Style Sot - 223 Sot - 223
No Of Pins 4Pins 4Pins
Operating Temperature Max 150 C 150 C
Product Range - -
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Svhc No Svhc (17 - Dec - 2015) No Svhc (17 - Dec - 2015)

We are delighted to provide the BSP60 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP60 and other electronic components in the Darlington Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP60 BSP61 BSP62 PNP Darlington transistors Product data sheet 2001 May 31 Supersedes data of 1999 Apr 29NXP Semiconductors Product data sheet PNP Darlington transistors BSP60 BSP61 BSP62 FEATURES PINNING High current (max. 0.5 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diode and resistor. 2, 4 collector 3 emitter APPLICATIONS Industrial switching applications such as: 4 Print hammer 2, 4 Solenoid 1 Relay and lamp drivers. DESCRIPTION 12 3 PNP Darlington transistor in a SOT223 plastic package. 3 Top view MAM266 NPN complements: BSP50, BSP51 and BSP52. Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BSP60 60 V BSP61 80 V BSP62 90 V V collector-emitter voltage V = 0 CES BE BSP60 45 V BSP61 60 V BSP62 80 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 1 A C I peak collector current 2 A CM I base current (DC) 100 mA B P total power dissipation T 25 C note 1 1.25 W tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 2 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm . For other mounting conditions, see Thermal considerations for the SOT223 in the General Part of associated Handbook. 2001 May 31 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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