X-On Electronics has gained recognition as a prominent supplier of BFR31.215 JFET across the USA, India, Europe, Australia, and various other global locations. BFR31.215 JFET are a product manufactured by NXP. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

BFR31.215 NXP

BFR31.215 electronic component of NXP
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Part No.BFR31.215
Manufacturer: NXP
Category: JFET
Description: JFET TAPE7 FET-RFSS
High power, low-voltage bipolar RF transistor providing up to 12 dB gain.
Datasheet: BFR31.215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.3363 ea
Line Total: USD 1.01 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 3
Multiples : 1
3 : USD 0.3363
11 : USD 0.1972
148 : USD 0.1863
3000 : USD 0.1822

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 3
Multiples : 1
3 : USD 0.3672
12 : USD 0.202
154 : USD 0.1894

   
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Gate-Source Voltage
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We are delighted to provide the BFR31.215 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR31.215 and other electronic components in the JFET category and beyond.

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's SAA5231M series BFR31.215 is an Darlington Transistor array part of NXP's SAA5231M series. It features two channels that are driven by independent input and output stages. The transistor array has a total power dissipation (maximum) of 1.7W and a maximum collector current of 1.2A. It has a typical voltage drop between the collector and emitter terminals of 0.8V. Its maximum AC and DC voltages are rated at 50V and 40V, respectively. The junction temperature range for the part is -40°C to +125°C. The package for BFR31.215 is an 8-pin DIP and the dimensions are 6.2 x 6.2 x 7.5 mm.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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