X-On Electronics has gained recognition as a prominent supplier of NDBA100N10BT4H MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDBA100N10BT4H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDBA100N10BT4H ON Semiconductor

NDBA100N10BT4H electronic component of ON Semiconductor
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See Product Specifications
Part No.NDBA100N10BT4H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH 100A 100V TO-263
Datasheet: NDBA100N10BT4H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.9844
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Obsolete
0
MOQ : 373
Multiples : 373
373 : USD 1.1283
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6771
10 : USD 1.4255
100 : USD 1.1435
500 : USD 0.9986
800 : USD 0.8233
2400 : USD 0.8186
4800 : USD 0.8186
9600 : USD 0.7874
24800 : USD 0.7561
N/A

Obsolete
0
MOQ : 14
Multiples : 1
14 : USD 1.2909
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Package Case
Brand
Factory Pack Quantity :
Rohs Mouser
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NDBA100N10BT4H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDBA100N10BT4H and other electronic components in the MOSFETs category and beyond.

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NDBA100N10B Power MOSFET www.onsemi.com 100V, 6.9m, 100A, N-Channel Features Low On-Resistance V R (on) Max I DSS DS D Max Low Gate Charge 6.9 m 15V High Speed Switching 100V 100A 8.2 m 10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2,4 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 100V DSS 1:Gate 1 Gate to Source Voltage V 20 V 2:Drain GSS 3:Source Drain Current (DC) I 100A D 4:Drain Drain Current (Pulse) 3 I 400 A DP PW10s, duty cycle1% Power Dissipation P 110 W D Marking Tc=25C 4 Tj 175 C Junction Temperature 100N10 Tstg 55 to +175 C Storage Temperature 2 1 Source Current (Body Diode) I 100A LOTNo. S B 3 1 Avalanche Energy (Single Pulse) * E 147mJ AS TO-263 Lead Temperature for Soldering C CASE 418AJ T 260 L Purposes, 3mm from Case for 10 Seconds Packing Type : TL Thermal Resistance Ratings Unit Parameter Symbol Value Junction to Case Steady State R 1.36 JC C/W 2 Junction to Ambient * R 62.5 JA TL 1 Note : * V =48V, L=100H, I =40A (Fig.1) DD AV 2 * Surface mounted on FR4 board using recommended footprint Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 1 NDBA100N10B/D NDBA100N10B Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 100 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4V GS DS D Forward Transconductance g V =10V, I=50A 75 S FS DS D R(on)1 I =50A, V=15V 5.7 6.9m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 6.3 8.2m DS D GS Input Capacitance Ciss 2,950 pF Output Capacitance Coss V =50V, f=1MHz 1,250 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 40 ns d Rise Time t 385 ns r See Fig.2 Turn-OFF Delay Time t (off) 68 ns d Fall Time t 52 ns f Total Gate Charge Qg 35 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 13 nC DS GS D Gate to Drain Miller Charge Qgd 10 nC Forward Diode Voltage V I =100A, V=0V 1.1 1.5V SD S GS Reverse Recovery Time t 130 ns rr See Fig.3 Reverse Recovery Charge I =100A, V =0V, V =50V, di/dt=100A/s Q S GS DD 400 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit D L 50 G NDBA100N10B S 10V 50 V DD 0V Fig.3 Reverse Recovery Time Test Circuit D NDBA100N10B L G S V DD DriverMOSFET www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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