NDBA100N10B Power MOSFET www.onsemi.com 100V, 6.9m, 100A, N-Channel Features Low On-Resistance V R (on) Max I DSS DS D Max Low Gate Charge 6.9 m 15V High Speed Switching 100V 100A 8.2 m 10V 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 2,4 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 100V DSS 1:Gate 1 Gate to Source Voltage V 20 V 2:Drain GSS 3:Source Drain Current (DC) I 100A D 4:Drain Drain Current (Pulse) 3 I 400 A DP PW10s, duty cycle1% Power Dissipation P 110 W D Marking Tc=25C 4 Tj 175 C Junction Temperature 100N10 Tstg 55 to +175 C Storage Temperature 2 1 Source Current (Body Diode) I 100A LOTNo. S B 3 1 Avalanche Energy (Single Pulse) * E 147mJ AS TO-263 Lead Temperature for Soldering C CASE 418AJ T 260 L Purposes, 3mm from Case for 10 Seconds Packing Type : TL Thermal Resistance Ratings Unit Parameter Symbol Value Junction to Case Steady State R 1.36 JC C/W 2 Junction to Ambient * R 62.5 JA TL 1 Note : * V =48V, L=100H, I =40A (Fig.1) DD AV 2 * Surface mounted on FR4 board using recommended footprint Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 1 NDBA100N10B/D NDBA100N10B Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 100 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4V GS DS D Forward Transconductance g V =10V, I=50A 75 S FS DS D R(on)1 I =50A, V=15V 5.7 6.9m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 6.3 8.2m DS D GS Input Capacitance Ciss 2,950 pF Output Capacitance Coss V =50V, f=1MHz 1,250 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 40 ns d Rise Time t 385 ns r See Fig.2 Turn-OFF Delay Time t (off) 68 ns d Fall Time t 52 ns f Total Gate Charge Qg 35 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 13 nC DS GS D Gate to Drain Miller Charge Qgd 10 nC Forward Diode Voltage V I =100A, V=0V 1.1 1.5V SD S GS Reverse Recovery Time t 130 ns rr See Fig.3 Reverse Recovery Charge I =100A, V =0V, V =50V, di/dt=100A/s Q S GS DD 400 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit D L 50 G NDBA100N10B S 10V 50 V DD 0V Fig.3 Reverse Recovery Time Test Circuit D NDBA100N10B L G S V DD DriverMOSFET www.onsemi.com 2