NDBA180N10B Power MOSFET 100V, 2.8m , 180A, N-Channel www.onsemi.com Features V R (on) Max I DSS DS D Max Ultra Low On-Resistance 2.8m 15V Low Gate Charge 100V 180A 3.3m 10V High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS compliance Electrical Connection Specifications N-Channel 2,4 Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage V 100 V DSS Gate to Source Voltage V 20 V GSS 1:Gate 2:Drain 1 Drain Current (DC) I 180 A D 3:Source Drain Current (DC) Limited by Package I 100 A DL 4:Drain Drain Current (Pulse) I 600 DP A PW 10s, duty cycle1% 3 Power Dissipation P 200 W D Tc=25 C Marking Junction Temperature Tj 175 C C Storage Temperature Tstg 55 to +175 Source Current (Body Diode) I 100 A S Avalanche Energy (Single Pulse) (Note 2) E 451 mJ AS Lead Temperature for Soldering T 260 C L Purposes, 3mm from Case for 10 Seconds Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : V =48V, L=100 H, I =70A (Fig.1) DD AV Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R 0.75 JC C/W Junction to Ambient (Note 3) R 62.5 JA Note 3 : Surface mounted on FR4 board using recommended footprint ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : January 2016 - Rev. 4 NDBA180N10B/D NDBA180N10B Electrical Characteristics at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 200 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4 V GS DS D Forward Transconductance g V =10V, I=50A 150 S FS DS D R(on)1 I =50A, V=15V 2.3 2.8 m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 2.5 3.3 m DS D GS Input Capacitance Ciss 6,950 pF Output Capacitance Coss V =50V, f=1MHz 3,000 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 95 ns d Rise Time t 320 ns r See Fig.2 Turn-OFF Delay Time t (off) 185 ns d Fall Time t 130 ns f Total Gate Charge Qg 95 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 31 nC DS GS D Gate to Drain Miller Charge Qgd 26 nC Forward Diode Voltage V I =100A, V=0V 0.9 1.5 V SD S GS Reverse Recovery Time t See Fig.3 150 ns rr Reverse Recovery Charge Q I =100A, V =0V, V =50V, di/dt=100A/ s 580 nC rr S GS DD Reverse Recovery Charge Q I =100A, V =0V, V =50V, di/dt=100A/ s 580 nC rr S GS DD Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit www.onsemi.com 2