X-On Electronics has gained recognition as a prominent supplier of NDBA180N10BT4H MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDBA180N10BT4H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDBA180N10BT4H ON Semiconductor

NDBA180N10BT4H electronic component of ON Semiconductor
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See Product Specifications
Part No.NDBA180N10BT4H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH 180A 100V TO-263
Datasheet: NDBA180N10BT4H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 190
Multiples : 190
190 : USD 1.7917
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.8528
10 : USD 2.4167
100 : USD 2.1021
250 : USD 1.9948
500 : USD 1.7875
800 : USD 1.5087
2400 : USD 1.4371
4800 : USD 1.3728
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDBA180N10BT4H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDBA180N10BT4H and other electronic components in the MOSFETs category and beyond.

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NDBA180N10B Power MOSFET 100V, 2.8m , 180A, N-Channel www.onsemi.com Features V R (on) Max I DSS DS D Max Ultra Low On-Resistance 2.8m 15V Low Gate Charge 100V 180A 3.3m 10V High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS compliance Electrical Connection Specifications N-Channel 2,4 Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage V 100 V DSS Gate to Source Voltage V 20 V GSS 1:Gate 2:Drain 1 Drain Current (DC) I 180 A D 3:Source Drain Current (DC) Limited by Package I 100 A DL 4:Drain Drain Current (Pulse) I 600 DP A PW 10s, duty cycle1% 3 Power Dissipation P 200 W D Tc=25 C Marking Junction Temperature Tj 175 C C Storage Temperature Tstg 55 to +175 Source Current (Body Diode) I 100 A S Avalanche Energy (Single Pulse) (Note 2) E 451 mJ AS Lead Temperature for Soldering T 260 C L Purposes, 3mm from Case for 10 Seconds Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : V =48V, L=100 H, I =70A (Fig.1) DD AV Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R 0.75 JC C/W Junction to Ambient (Note 3) R 62.5 JA Note 3 : Surface mounted on FR4 board using recommended footprint ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : January 2016 - Rev. 4 NDBA180N10B/D NDBA180N10B Electrical Characteristics at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 200 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4 V GS DS D Forward Transconductance g V =10V, I=50A 150 S FS DS D R(on)1 I =50A, V=15V 2.3 2.8 m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 2.5 3.3 m DS D GS Input Capacitance Ciss 6,950 pF Output Capacitance Coss V =50V, f=1MHz 3,000 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 95 ns d Rise Time t 320 ns r See Fig.2 Turn-OFF Delay Time t (off) 185 ns d Fall Time t 130 ns f Total Gate Charge Qg 95 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 31 nC DS GS D Gate to Drain Miller Charge Qgd 26 nC Forward Diode Voltage V I =100A, V=0V 0.9 1.5 V SD S GS Reverse Recovery Time t See Fig.3 150 ns rr Reverse Recovery Charge Q I =100A, V =0V, V =50V, di/dt=100A/ s 580 nC rr S GS DD Reverse Recovery Charge Q I =100A, V =0V, V =50V, di/dt=100A/ s 580 nC rr S GS DD Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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