ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. R = 0.025 V = 5V. DS(ON) GS Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. V < 2.0V. GS(TH) field effect transistors are produced using ON Semiconductor s proprietary, high cell density, DMOS Critical DC electrical parameters specified at elevated technology. This very high density process has been temperature. especially tailored to minimize on-state resistance, Rugged internal source-drain diode can eliminate the need provide superior switching performance, and withstand for an external Zener diode transient suppressor. high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low 175C maximum junction temperature rating. voltage applications such as automotive, DC/DC High density cell design for extremely low R . DS(ON) converters, PWM motor controls, and other battery 2 powered circuits where fast switching, low in-line power TO-220 and TO-263 (D PAK) package for both through hole loss, and resistance to transients are needed. and surface mount applications. D G S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter NDP6060L NDB6060L Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1 M) DGR GS V Gate-Source Voltage - Continuous 16 V GSS - Nonrepetitive (t < 50 s) 25 P I Drain Current - Continuous 48 A D - Pulsed 144 P Total Power Dissipation T = 25C 100 W D C Derate above 25C 0.67 W/C Operating and Storage Temperature -65 to 175 C T ,T J STG T Maximum lead temperature for soldering 275 C L purposes, 1/8 from case for 5 seconds 1997 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 5 NDP6060L/D