NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 1.2 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS DSS DS(on) Compliant 600 V 3.6 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF NDD Unit D (2) DraintoSource Voltage V 600 V DSS Continuous Drain Current R I 3.1 2.6 A JC D (Note 1) Continuous Drain Current R I 2.9 1.65 A JC D G (1) T = 100C (Note 1) A Pulsed Drain Current, V 10 V I 12 10 A GS DM Power Dissipation R P 27 61 W JC D S (3) GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy, E 100 mJ AS I = 3.0 A D ESD (HBM) (JESD 22A114) V 3000 V esd RMS Isolation Voltage (t = 0.3 sec., V 4500 V ISO R.H. 30%, T = 25C) (Figure 17) A Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns Continuous Source Current (Body I 3.0 A S 1 Diode) 2 3 Maximum Temperature for Soldering T 260 C L NDF03N60ZG, Leads NDF03N60ZH TO220FP Operating Junction and T , T 55 to 150 C J stg CASE 221AH Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 1. Limited by maximum junction temperature 2. I = 3.0 A, di/dt 100 A/ s, V BV , T = +150C SD DD DSS J 2 1 1 3 2 3 NDD03N60Z1G NDD03N60ZT4G IPAK DPAK CASE 369D CASE 369AA MARKING AND ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NDF03N60Z/DNDF03N60Z, NDD03N60Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDF03N60Z R 4.7 C/W JC NDD03N60Z 2.0 JunctiontoAmbient Steady State (Note 3) NDF03N60Z R 51 JA (Note 4) NDD03N60Z 40 (Note 3) NDD03N60Z1 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1 sq. pad size, (Cu area = 1.127 in sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, BV / 0.6 V/C DSS I = 1 mA efficient T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 5) Static DraintoSource V = 10 V, I = 1.2 A R 3.3 3.6 GS D DS(on) OnResistance Gate Threshold Voltage V = V , I = 50 A V 3.0 3.9 4.5 V DS GS D GS(th) Forward Transconductance V = 15 V, I = 1.5 A g 2.0 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) C 248 312 372 pF iss Output Capacitance (Note 6) C 30 39 50 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 4 8 12 rss (Note 6) nC Total Gate Charge (Note 6) Q 6 12 18 g GatetoSource Charge (Note 6) Q 1.5 2.5 4 gs V = 300 V, I = 3.0 A, DD D GatetoDrain (Miller) Charge Q 3 6.1 9 V = 10 V gd GS (Note 6) Plateau Voltage V 6.4 V GP Gate Resistance R 6.0 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 9 ns d(on) Rise Time t 8 r V = 300 V, I = 3.0 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 16 d(off) Fall Time t 10 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 3.0 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 265 ns rr V = 0 V, V = 30 V GS DD I = 3.0 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 0.9 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width 380 s, Duty Cycle 2%. 6. Guaranteed by design. www.onsemi.com 2