X-On Electronics has gained recognition as a prominent supplier of NDF03N60ZG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDF03N60ZG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDF03N60ZG ON Semiconductor

NDF03N60ZG electronic component of ON Semiconductor
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Part No.NDF03N60ZG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 3.6 OHM 600V TO-220FP
Datasheet: NDF03N60ZG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1145: USD 0.379 ea
Line Total: USD 433.96 
Availability - 0
MOQ: 1145  Multiples: 1145
Pack Size: 1145
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 50
Multiples : 1
50 : USD 0.4286
150 : USD 0.3561
750 : USD 0.338

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1145
Multiples : 1145
1145 : USD 0.379

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDF03N60ZG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDF03N60ZG and other electronic components in the MOSFETs category and beyond.

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NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 1.2 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS DSS DS(on) Compliant 600 V 3.6 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF NDD Unit D (2) DraintoSource Voltage V 600 V DSS Continuous Drain Current R I 3.1 2.6 A JC D (Note 1) Continuous Drain Current R I 2.9 1.65 A JC D G (1) T = 100C (Note 1) A Pulsed Drain Current, V 10 V I 12 10 A GS DM Power Dissipation R P 27 61 W JC D S (3) GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy, E 100 mJ AS I = 3.0 A D ESD (HBM) (JESD 22A114) V 3000 V esd RMS Isolation Voltage (t = 0.3 sec., V 4500 V ISO R.H. 30%, T = 25C) (Figure 17) A Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns Continuous Source Current (Body I 3.0 A S 1 Diode) 2 3 Maximum Temperature for Soldering T 260 C L NDF03N60ZG, Leads NDF03N60ZH TO220FP Operating Junction and T , T 55 to 150 C J stg CASE 221AH Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 1. Limited by maximum junction temperature 2. I = 3.0 A, di/dt 100 A/ s, V BV , T = +150C SD DD DSS J 2 1 1 3 2 3 NDD03N60Z1G NDD03N60ZT4G IPAK DPAK CASE 369D CASE 369AA MARKING AND ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NDF03N60Z/DNDF03N60Z, NDD03N60Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDF03N60Z R 4.7 C/W JC NDD03N60Z 2.0 JunctiontoAmbient Steady State (Note 3) NDF03N60Z R 51 JA (Note 4) NDD03N60Z 40 (Note 3) NDD03N60Z1 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1 sq. pad size, (Cu area = 1.127 in sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, BV / 0.6 V/C DSS I = 1 mA efficient T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 5) Static DraintoSource V = 10 V, I = 1.2 A R 3.3 3.6 GS D DS(on) OnResistance Gate Threshold Voltage V = V , I = 50 A V 3.0 3.9 4.5 V DS GS D GS(th) Forward Transconductance V = 15 V, I = 1.5 A g 2.0 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) C 248 312 372 pF iss Output Capacitance (Note 6) C 30 39 50 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 4 8 12 rss (Note 6) nC Total Gate Charge (Note 6) Q 6 12 18 g GatetoSource Charge (Note 6) Q 1.5 2.5 4 gs V = 300 V, I = 3.0 A, DD D GatetoDrain (Miller) Charge Q 3 6.1 9 V = 10 V gd GS (Note 6) Plateau Voltage V 6.4 V GP Gate Resistance R 6.0 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 9 ns d(on) Rise Time t 8 r V = 300 V, I = 3.0 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 16 d(off) Fall Time t 10 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 3.0 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 265 ns rr V = 0 V, V = 30 V GS DD I = 3.0 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 0.9 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width 380 s, Duty Cycle 2%. 6. Guaranteed by design. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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