X-On Electronics has gained recognition as a prominent supplier of SI2371EDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2371EDS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2371EDS-T1-GE3 VBsemi Elec

SI2371EDS-T1-GE3 electronic component of VBsemi Elec
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Part No.SI2371EDS-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: SI2371EDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1043 ea
Line Total: USD 0.52 
Availability - 1488
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1488
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1043
50 : USD 0.0859
150 : USD 0.0765
500 : USD 0.0696
3000 : USD 0.0544
6000 : USD 0.0516

   
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We are delighted to provide the SI2371EDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2371EDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2371EDS-T1-GE3 is a SOT-23 dual N-channel MOSFET manufactured by VBsemi Electronics. This highly integrated device is specially designed for applications like battery management and high speed switching. It features high-speed switching performance, low on-resistance, low threshold voltage, and RoHS compliant packaging. Its wide voltage range of up to 30V and high bidirectional Drain-Source current up to 1.5A make it suitable for high power designs. The SO-23 package has an efficient thermal performance and is RoHS-compliant. This device offers high performance signal integrity and switching with the flexibility to meet the most demanding automotive, medical, and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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