X-On Electronics has gained recognition as a prominent supplier of 2N7002K MOSFET across the USA, India, Europe, Australia, and various other global locations. 2N7002K MOSFET are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

2N7002K VBsemi Elec

2N7002K electronic component of VBsemi Elec
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See Product Specifications
Part No.2N7002K
Manufacturer: VBsemi Elec
Category: MOSFET
Description: SOT-23 MOSFETs ROHS
Datasheet: 2N7002K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0437 ea
Line Total: USD 0.44

Availability - 9
Ship by Tue. 23 Jul to Fri. 26 Jul
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
9
Ship by Tue. 23 Jul to Fri. 26 Jul
MOQ : 10
Multiples : 10
10 : USD 0.0394
100 : USD 0.0387
300 : USD 0.0381
1000 : USD 0.0376

   
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We are delighted to provide the 2N7002K from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002K and other electronic components in the MOSFET category and beyond.

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The 2N7002K is a MOSFET manufactured by VBsemi Elec. It is a SOT-23 P-Ch MOSFET with ESD protection. It has a drain-source voltage of 60V, and can handle up to 200mV of drain-to-source leakage current. The maximum drain current is 600mA, allowing for efficient powered applications. The total gate charge is 10nC and the maximum transconductance is 2.5mS. It is RoHS compliant and ideal for a variety of applications, such as powering low power consumer electronics, OR logic switching applications, and connecting devices to different interfaces.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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