X-On Electronics has gained recognition as a prominent supplier of SH8K32TB1 MOSFET across the USA, India, Europe, Australia, and various other global locations. SH8K32TB1 MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SH8K32TB1 ROHM

SH8K32TB1 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.SH8K32TB1
Manufacturer: ROHM
Category: MOSFET
Description: Mosfet Array 2 N-Channel (Dual) 60V 4.5A 2W Surface Mount 8-SOP (5.0x6.0)
Datasheet: SH8K32TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5755 ea
Line Total: USD 1.58

Availability - 38408
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
81
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.622
10 : USD 1.4878
30 : USD 1.4039
100 : USD 1.3185
500 : USD 1.2789
1000 : USD 1.2625

38408
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.5755
10 : USD 1.3455
100 : USD 1.0948
250 : USD 1.0362
500 : USD 0.9511
1000 : USD 0.828
2500 : USD 0.82
5000 : USD 0.8142
10000 : USD 0.7877

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8K32TB1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K32TB1 and other electronic components in the MOSFET category and beyond.

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SH8K32 Datasheet 60V Nch+Nch Power MOSFET llOutline V 60V DSS R (Max.) 65m DS(on) SOP8 I 4.5A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8K32 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS Continuous drain current I 4.5 A D *1 I Pulsed drain current 18 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170116 - Rev.001 2017 ROHM Co., Ltd. All rights reserved. SH8K32 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 4.5A - 46 65 GS D Static drain - source *4 R V = 4.5V, I = 4.5A - 52 73 m DS(on) GS D on - state resistance V = 4.0V, I = 4.5A - 55 77 GS D R Gate resistance f = 1MHz, open drain - 5.9 - G Forward Transfer *4 Y V = 10V, I = 4.5A 4.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170116 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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