X-On Electronics has gained recognition as a prominent supplier of SH8K41TB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8K41TB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8K41TB ROHM

SH8K41TB electronic component of ROHM
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See Product Specifications
Part No.SH8K41TB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, DUAL N-CH, 80V, 3.4A, SOP-8
Datasheet: SH8K41TB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9702 ea
Line Total: USD 0.97 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9702
10 : USD 0.8568
100 : USD 0.7686
250 : USD 0.6741
500 : USD 0.6206
1000 : USD 0.6016

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8K41TB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K41TB and other electronic components in the MOSFETs category and beyond.

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SH8K41 Datasheet 80V Nch+Nch Middle MOSFET llOutline SOP8 V 80V DSS R (Max.) 130m DS(on) I 3.4A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking SH8K41 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 80 V DSS *1 I Continuous drain current 3.4 A D *2 I Pulsed drain current 13.6 A D, pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 8.4 mJ AS *3 I Avalanche current 3.4 A AS *4 P total 2.0 D Power dissipation W *4 P element 1.4 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20140804 - Rev.001 SH8K41 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - 62.5 - /W thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 80 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 81.3 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 80V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.4A - 90 130 GS D Static drain - source R V = 4.5V, I = 3.4A - 110 150 m DS(on) GS D on - state resistance V = 4.0V, I = 3.4A - 120 160 GS D *5 g V = 10V, I = 3.4A Transconductance 3.0 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1mH, V = 40V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic board. *5 Pulsed www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2/11 20140804 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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