X-On Electronics has gained recognition as a prominent supplier of SH8K41GZETB MOSFET across the USA, India, Europe, Australia, and various other global locations. SH8K41GZETB MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SH8K41GZETB ROHM

SH8K41GZETB electronic component of ROHM
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See Product Specifications
Part No.SH8K41GZETB
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: SH8K41GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.836 ea
Line Total: USD 0.84

Availability - 19583
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19583
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.836
10 : USD 0.6946
100 : USD 0.5554
500 : USD 0.4853
1000 : USD 0.4059
2500 : USD 0.3737
5000 : USD 0.3726
25000 : USD 0.3715

2405
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 133
Multiples : 1
133 : USD 0.8025
250 : USD 0.7702
500 : USD 0.7424
1000 : USD 0.7182

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SH8K41GZETB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K41GZETB and other electronic components in the MOSFET category and beyond.

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SH8K41 Datasheet 80V Nch+Nch Power MOSFET llOutline V 80V DSS R (Max.) 130m DS(on) SOP8 I 3.4A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8K41 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 80 V DSS Continuous drain current I 3.4 A D *1 I Pulsed drain current 13.6 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20161202 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. SH8K41 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 80 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 81.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 80V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 3.4A - 90 130 GS D Static drain - source R V = 4.5V, I = 3.4A - 110 150 m DS(on) GS D on - state resistance V = 4.0V, I = 3.4A - 120 160 GS D R Gate resistance f = 1MHz, open drain - 5.0 - G Forward Transfer *4 Y V = 10V, I = 3.4A 3.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20161202 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
ROHM Semicon
ROHM Semiconductor

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