Si1002R www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R tested g 0.560 at V = 4.5 V 0.5 GS Gate-source ESD protected: 1000 V 0.620 at V = 2.5 V 0.2 GS 30 0.72 nC Material categorization: 0.700 at V = 1.8 V 0.2 GS For definitions of compliance please see 1.100 at V = 1.5 V 0.05 GS www.vishay.com/doc 99912 SC-75A APPLICATIONS Load switch D D 3 High speed switching DC/DC converters / boost converters For smart phones, tablet PCs and G mobile computing 2 S 1 G Top View S N-Channel MOSFET Marking Code: L Ordering Information: Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 8 GS a,b T = 25 C 0.61 A a Continuous Drain Current (T = 150 C) I J D a,b T = 70 C 0.49 A A Pulsed Drain Current (t = 100 s) I 2 DM a,b Continuous Source-Drain Diode Current T = 25 C I 0.18 A A S a,b T = 25 C 0.22 A a Maximum Power Dissipation P W D a,b T = 70 C 0.14 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT t 5 s 470 565 b Maximum Junction-to-Ambient R C/W thJA Steady State 560 675 Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. S14-0770-Rev. A, 14-Apr-14 Document Number: 64257 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1002R www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -29 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --1.8- GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V - - 30 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 85 C - - 3 DS GS J a On-State Drain Current I V = 5 V, V = 4.5 V 2 - - A D(on) DS GS V = 4.5 V, I = 0.5 A - 0.450 0.560 GS D V = 2.5 V, I = 0.2 A - 0.500 0.620 GS D a Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 0.2 A - 0.560 0.700 GS D V = 1.5 V, I = 0.05 A - 0.647 1.100 GS D Forward Transconductance g V = 15 V, I = 0.5 A - 7.5 - S fs DS D b Dynamic Input Capacitance C -36 - iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz -9 - pF oss DS GS Reverse Transfer Capacitance C -5 - rss V = 15 V, V = 8 V, I = 0.5 A - 1.2 2 DS GS D Total Gate Charge Q g - 0.72 1.2 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 0.5 A -0.1 - gs DS GS D Gate-Drain Charge Q -0.16- gd Gate Resistance R f = 1 MHz 2.4 12.2 24.4 g Turn-On Delay Time t -6 15 d(on) Rise Time t -13 24 r V = 15 V, R = 37.5 DD L ns I 0.4 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -2030 d(off) Fall Time t -11 20 f Drain-Source Body Diode Characteristics a Pulse Diode Forward Current I -- 2 A SM Body Diode Voltage V I = 0.5 A - 0.8 1.2 V SD S Body Diode Reverse Recovery Time t - 8 15 ns rr Body Diode Reverse Recovery Charge Q -2 4 nC rr I = 0.4 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t -4 - a ns Reverse Recovery Rise Time t -4 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0770-Rev. A, 14-Apr-14 Document Number: 64257 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000