X-On Electronics has gained recognition as a prominent supplier of SH8K22TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8K22TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8K22TB1 ROHM

SH8K22TB1 electronic component of ROHM
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Part No.SH8K22TB1
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 45V 4.5A (Ta) 1.4W (Ta) Surface Mount 8-SOP
Datasheet: SH8K22TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.5269 ea
Line Total: USD 1317.25 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6816

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.5269
5000 : USD 0.506
25000 : USD 0.5049

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8K22TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K22TB1 and other electronic components in the MOSFETs category and beyond.

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4V Drive Nch+Nch MOSFET SH8K22 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SH8K22 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate Absolute maximum ratings (Ta=25C) 1 1 (3) Tr2 Source <It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) Parameter Symbol Limits Unit (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE Drain-source voltage V 45 V DSS (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and Gate-source voltage V 20 V GSS the source terminals to protect the diode against static Continuous I 4.5 A electricity when the product is in use. Use the protection D Drain current circuit when the fixed voltages are exceeded. Pulsed I 18 A DP *1 I Source current Continuous 1A S (Body diode) Pulsed I 18 A SP *1 2 W / TOTAL Total power dissipation P D *2 1.4 W / ELEMENT o Chanel temperature T 150 ch C o Range of Storage temperature T -55 to +150 stg C *1 PW 10Duty cycle 1 *2 Mounted on a ceramic board www.rohm.com 2009.12 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs SH8K22 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 45 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 45V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 33 46 m I = 4.5A, V = 10V D GS Static drain-source on-state RDS (on) 41 57 m ID= 4.5A, VGS= 4.5V resistance 46 64 m ID= 4.5A, VGS= 4.0V Forward transfer admittance Y 3.5 SV = 10V, I = 4.5A fs DS D Input capacitance Ciss 550 pF VDS= 10V Output capacitance Coss 140 pF VGS=0V Reverse transfer capacitance C 70 pF f=1MHz rss Turn-on delay time td (on) 12 ns VDD 25V ID= 2.5A Rise time tr 18 ns VGS= 10V Turn-off delay time t 42 ns d (off) RL= 10 Fall time tf 12 ns RG=10 Total gate charge Qg 6.8 9.6 nC VDD 25V, VGS= 5V Gate-source charge Q 2.0 nC I = 4.5A gs D Gate-drain charge Qgd2.9 nC RL= 5.6, RG= 10 Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Condition Symbol Min. Typ. Max. Unit Forward voltage I =4.5A/V =0V V * 1.2 V S GS SD * pulsed www.rohm.com 2009.12 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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