4V Drive Nch+Nch MOSFET SH8K22 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SH8K22 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate Absolute maximum ratings (Ta=25C) 1 1 (3) Tr2 Source <It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) Parameter Symbol Limits Unit (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE Drain-source voltage V 45 V DSS (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and Gate-source voltage V 20 V GSS the source terminals to protect the diode against static Continuous I 4.5 A electricity when the product is in use. Use the protection D Drain current circuit when the fixed voltages are exceeded. Pulsed I 18 A DP *1 I Source current Continuous 1A S (Body diode) Pulsed I 18 A SP *1 2 W / TOTAL Total power dissipation P D *2 1.4 W / ELEMENT o Chanel temperature T 150 ch C o Range of Storage temperature T -55 to +150 stg C *1 PW 10Duty cycle 1 *2 Mounted on a ceramic board www.rohm.com 2009.12 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs SH8K22 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 45 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 45V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 33 46 m I = 4.5A, V = 10V D GS Static drain-source on-state RDS (on) 41 57 m ID= 4.5A, VGS= 4.5V resistance 46 64 m ID= 4.5A, VGS= 4.0V Forward transfer admittance Y 3.5 SV = 10V, I = 4.5A fs DS D Input capacitance Ciss 550 pF VDS= 10V Output capacitance Coss 140 pF VGS=0V Reverse transfer capacitance C 70 pF f=1MHz rss Turn-on delay time td (on) 12 ns VDD 25V ID= 2.5A Rise time tr 18 ns VGS= 10V Turn-off delay time t 42 ns d (off) RL= 10 Fall time tf 12 ns RG=10 Total gate charge Qg 6.8 9.6 nC VDD 25V, VGS= 5V Gate-source charge Q 2.0 nC I = 4.5A gs D Gate-drain charge Qgd2.9 nC RL= 5.6, RG= 10 Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Condition Symbol Min. Typ. Max. Unit Forward voltage I =4.5A/V =0V V * 1.2 V S GS SD * pulsed www.rohm.com 2009.12 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs