X-On Electronics has gained recognition as a prominent supplier of 30A02CH-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 30A02CH-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

30A02CH-TL-E ON Semiconductor

30A02CH-TL-E electronic component of ON Semiconductor
30A02CH-TL-E ON Semiconductor
30A02CH-TL-E Bipolar Transistors - BJT
30A02CH-TL-E  Semiconductors

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See Product Specifications
Part No. 30A02CH-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP PNP 0.7A 30V
Datasheet: 30A02CH-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3913 ea
Line Total: USD 0.39 
Availability - 5822
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
87
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3953
50 : USD 0.3075
150 : USD 0.2082
500 : USD 0.1721
3000 : USD 0.1559
6000 : USD 0.1462

5822
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.315
100 : USD 0.1992
500 : USD 0.1386
1000 : USD 0.1166
3000 : USD 0.1034
6000 : USD 0.0957
9000 : USD 0.088
24000 : USD 0.0869

1228
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.448
10 : USD 0.3416
86 : USD 0.2072
100 : USD 0.1904
500 : USD 0.189

291334
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 4167
Multiples : 1
4167 : USD 0.1125

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 30A02CH-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 30A02CH-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN7358A 30A02CH Bipolar Transistor 30A02CH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --30V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 520 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 4.7 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --200mA, I = --10mA --110 --220 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --200mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --30 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. 125 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 220 F 470 F V =5V V = --12V BE CC I =20I = --20I = --300mA C B1 B2 Ordering Information Device Package Shipping memo 30A02CH-TL-E CPH3 3,000pcs./reel Pb Free I -- V I -- V C CE C BE --700 --800 V = --2V CE --700 --600 --600 --500 --500 --400 --400 --300 --300 --200 --200 --500 A --100 --100 I =0 B 0 0 0 --100 --200 --900 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --300 --400 --500 --600 --700 --800 --1000 Base-to-Emitter Voltage, V -- V Collector-to-Emitter Voltage, V -- mV IT05049 IT05050 BE CE No.7358-2/6 --1mA --2mA --3mA --5mA --7mA --10mA --15mA --20mA --25mA --30mA --40mA --50mA Ta=75C 25C --25C Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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