Ordering number : ENA1816A SFT1440 N-Channel Power MOSFET SFT1440 at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 600 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =480V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =24V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 3.0 5.0 V GS DS D Forward Transfer Admittance yfs V =10V, I =0.8A 1.0 S DS D Static Drain-to-Source On-State Resistance R (on)1 I =0.8A, V =10V 6.2 8.1 DS D GS Input Capacitance Ciss 130 pF Output Capacitance Coss V =30V, f=1MHz 25 pF DS Reverse Transfer Capacitance Crss 4.0 pF Turn-ON Delay Time t (on) 9.1 ns d Rise Time t 15 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 18 ns d Fall Time t 19 ns f Total Gate Charge Qg 6.3 nC Gate-to-Source Charge Qgs V =300V, V =10V, I =1.5A 1.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.6 nC Diode Forward Voltage V I =1.5A, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V V =200V DD IN 10V 0V I =0.8A D V IN R =250 L D V OUT PW=10s D.C.1% G SFT1440 P.G 50 S Ordering Information Device Package Shipping memo SFT1440-E TP 500pcs./bag Pb Free SFT1440-TL-E TP-FA 700pcs./reel I -- V I -- V D DS D GS 2.0 2.0 V =10V DS 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 00 042 6 8 101214 16 18 20 013254 6 78 9 10 11 12 13 1415 Drain-to-Source Voltage, V -- V IT15875 Gate-to-Source Voltage, V -- V IT15876 DS GS No. A1816-2/9 V =5V GS 6V 7V 25C 75C 8V 15V 10V Tc= --25C Drain Current, I -- A D Drain Current, I -- A D