SH8J65TB1 ROHM

4V Drive Pch+Pch MOSFET SH8J65 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET SOP8 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SH8J65 2 2 (1) Tr1 Source (2) Tr1 Gate Absolute maximum ratings (Ta=25C) 1 1 (3) Tr2 Source <It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) Parameter Symbol Limits Unit (6) Tr2 Drain (7) Tr1 Drain Drain-source voltage VDSS 30 V 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE V 20 V Gate-source voltage GSS Continuous ID 7.0 A Drain current 1 Pulsed IDP 28 A I 1.6 A Continuous S Source current 1 (Body diode) Pulsed ISP 28 A 2.0 W / TOTAL 2 Total power dissipation P D 1.4 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board www.rohm.com 2011.10 - Rev.B 1/5 c 2011 ROHM Co., Ltd. All rights reserved. SH8J65 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 21.5 29.0 m I = 7A, V = 10V D GS Static drain-source on-state RDS (on) 29.0 39.0 m ID= 3.5A, VGS= 4.5V resistance 31.0 40.8 m ID= 3.5A, VGS= 4.0V Forward transfer admittance Y 6.0 SV = 10V, I = 7A fs DS D Input capacitance Ciss 1200 pF VDS= 10V Output capacitance Coss 170 pF VGS=0V Reverse transfer capacitance C 170 pF f=1MHz rss Turn-on delay time td (on) 12 ns VDD 15V ID= 3.5A Rise time tr 40 ns VGS= 10V Turn-off delay time t 80 ns d (off) RL=4.3 Fall time tf 65 ns RG=10 Total gate charge Qg 18 nC VDD 15V I = 7A D Gate-source charge Q 3.5 nC gs VGS= 5V Gate-drain charge Qgd6.5 nC RL=2.1 / RG=10 Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 7A, VGS=0V Pulsed www.rohm.com 2011.10 - Rev.B 2/5 c 2011 ROHM Co., Ltd. All rights reserved.