SH8K10S Datasheet 30V Nch / Nch+SBD Power MOSFET Tr1 Tr2 llOutline Symbol Nch Nch+SBD V 30V 30V DSS SOP8 R (Max.) 24.0m 19.6m DS(on) I 7.0A 8.5A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SH8K10S llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Tr1 Tr2 Parameter Symbol Unit Nch Nch+SBD V Drain - Source voltage 30 30 V DSS I Continuous drain current 7.0 8.5 A D *1 I Pulsed drain current 28 34 A DP V Gate - Source voltage 20 20 V GSS *2 P 2.0 D Power dissipation total W *3 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/18 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. Last Time Buy SH8K10S Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient total /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = 1mA 30 - - GS D V I = 1mA, referenced to 25 Tr1 - 29 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = 1mA, referenced to 25 j Tr2 - 29 - D V = 30V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current V = 30V, V = 0V Tr2 - - 500 DS GS V = 0V, V = 20V Tr1 - - 10 DS GS Gate - Source I A GSS leakage current Tr2 V = 0V, V = 20V - - 10 DS GS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = 10V, I = 1mA 1.0 - 2.5 DS D V I = 1mA, referenced to 25 Tr1 - -1.6 - D GS(th) Gate threshold voltage mV/ temperature coefficient T I = 1mA, referenced to 25 Tr2 - -1.6 - j D V = 10V, I = 7.0A - 17.0 24.0 GS D V = 4.5V, I = 7.0A Tr1 - 23.0 33.0 GS D V = 4.0V, I = 7.0A - 25.0 35.0 GS D Static drain - source *4 R m DS(on) on - state resistance V = 10V, I = 8.5A - 14.0 19.6 GS D Tr2 V = 4.5V, I = 8.5A - 17.8 24.9 GS D V = 4.0V, I = 8.5A - 19.0 26.6 GS D V = 10V, I = 7.0A Tr1 5.0 - - DS D Forward Transfer *4 Y S fs Admittance V = 10V, I = 8.5A Tr2 8.0 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a Cu board (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/18 20190527 - Rev.003 Last Time Buy