X-On Electronics has gained recognition as a prominent supplier of SFT1305-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. SFT1305-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SFT1305-TL-E ON Semiconductor

SFT1305-TL-E electronic component of ON Semiconductor
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See Product Specifications
Part No.SFT1305-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
Datasheet: SFT1305-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
790: USD 0.6179 ea
Line Total: USD 488.14 
Availability - 1358
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 790  Multiples: 1
Pack Size: 1
Availability Price Quantity
388
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 700
Multiples : 700
700 : USD 0.962

2037
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 790
Multiples : 1
790 : USD 0.6179
1000 : USD 0.5836

1358
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 790
Multiples : 1
790 : USD 0.6179
1000 : USD 0.5836

388
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 400
Multiples : 400
400 : USD 0.962

   
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We are delighted to provide the SFT1305-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFT1305-TL-E and other electronic components in the MOSFETs category and beyond.

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SFT1305 Ordering number : ENA0698 P-Channel Silicon MOSFET General-Purpose Switching Device SFT1305 Applications Features Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --45 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --10 A D Drain Current (PW10s) I PW 10s, duty cycle 1% --40 A DP 1.0 W Allowable Power Dissipation P D Tc=25C15W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --45 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--45V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--5A 4.1 6.9 S DS D R (on)1 I =--5A, V =--10V 60 80 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--5A, V =--4V 105 147 m DS D GS Marking : T1305 Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 SFT1305/DSFT1305 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =--20V, f=1MHz 1060 pF DS Output Capacitance Coss V =--20V, f=1MHz 120 pF DS Reverse Transfer Capacitance Crss V =--20V, f=1MHz 90 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 11 ns d Rise Time t See specified Test Circuit. 50 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 80 ns d Fall Time t See specified Test Circuit. 60 ns f Total Gate Charge Qg V =--24V, V =--10V, I =--10A 20 nC DS GS D Gate-to-Source Charge Qgs V =--24V, V =--10V, I =--10A 4 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--24V, V =--10V, I =--10A 4 nC DS GS D Diode Forward Voltage V I =--10A, V =0V --1.0 --1.2 V SD S GS Package Dimensions Package Dimensions unit : mm (typ) unit : mm(typ) 7518-004 7003-004 2.3 6.5 6.5 2.3 5.0 0.5 5.0 0.5 4 4 0.85 0.5 0.85 0.7 1.2 12 3 0.6 0 to 0.2 0.6 0.5 1 : Gate 1 : Gate 1.2 2 : Drain 2 : Drain 12 3 3 : Source 3 : Source 4 : Drain 4 : Drain 2.3 2.3 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit V = --24V DD V IN 0V I = --5A D --10V R =4.8 L D V OUT V IN PW=10s D.C.1% G P.G 50 SFT1305 S Rev.0 I Page 2 of 4 I www.onsemi.com 0.8 5.5 1.6 1.5 7.5 7.0 0.8 5.5 1.5 2.5 7.0 1.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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