Ordering number : ENA1444B SFT1341 Power MOSFET SFT1341 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V=0V 40 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 40V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V = 10V, I = 1mA 0.4 1.4 V GS DS D Forward Transconductance g V = 10V, I = 5A 4.6 7.7 S FS DS D R(on)1 I = 5A, V = 4.5V 86 112 m DS D GS Static Drain to Source On-State Resistance R(on)2 I = 5A, V = 2.5V 110 154 m DS D GS R(on)3 I = 2.5A, V = 1.8V 140 210 m DS D GS Input Capacitance Ciss 650 pF Output Capacitance Coss V = 20V, f=1MHz 65 pF DS Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time t (on) 9.0 ns d Rise Time t 50 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 81 ns d Fall Time t 80 ns f Total Gate Charge Qg 8.0 nC Gate to Source Charge Qgs V = 20V, V = 4.5V, I = 10A 1.4 nC DS GS D Gate to Drain Miller Charge Qgd 2.5 nC Forward Diode Voltage V I = 10A, V=0V 1.0 1.5V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --20V DD IN 0V --4.5V I =--5A D V IN R =4 L D V OUT PW=10s D.C.1% G SFT1341 P.G 50 S No.A1444-2/6