X-On Electronics has gained recognition as a prominent supplier of RUF025N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUF025N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUF025N02TL ROHM

RUF025N02TL electronic component of ROHM
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See Product Specifications
Part No.RUF025N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
Datasheet: RUF025N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
74: USD 0.5509 ea
Line Total: USD 40.77 
Availability - 2681
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 74  Multiples: 1
Pack Size: 1
Availability Price Quantity
19498
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5203
10 : USD 0.3916
100 : USD 0.3036
500 : USD 0.2662
1000 : USD 0.2497
3000 : USD 0.2178

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 313
Multiples : 1
313 : USD 0.326
500 : USD 0.3142
1000 : USD 0.3041
2500 : USD 0.295
5000 : USD 0.287

2681
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 74
Multiples : 1
74 : USD 0.5509
107 : USD 0.3803
200 : USD 0.2112
1000 : USD 0.208
2000 : USD 0.2065

8270
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 288
Multiples : 1
288 : USD 0.3545
500 : USD 0.3418
1000 : USD 0.3306
2500 : USD 0.3209
5000 : USD 0.3123

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUF025N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF025N02TL and other electronic components in the MOSFETs category and beyond.

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RUF025N02 Datasheet Nch 20V 2.5A Middle Power MOSFET llOutline SOT-323T V 20V DSS R (Max.) 54m DS(on) TUMT3 I 2.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 5 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151026 - Rev.001 RUF025N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 39 54 GS D V = 2.5V, I = 2.5A - 49 68 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1.3A - 65 91 GS D V = 1.5V, I = 0.5A - 80 160 GS D R Gate resistance f = 1MHz, open drain - 7.5 - G Forward Transfer *4 Y V = 10V, I = 2.5A 3.6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151026 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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