X-On Electronics has gained recognition as a prominent supplier of RUR020N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUR020N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUR020N02TL ROHM

RUR020N02TL electronic component of ROHM
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See Product Specifications
Part No.RUR020N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET SW MOSFET MID PWR N-CH 20V 2A
Datasheet: RUR020N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1947 ea
Line Total: USD 0.97 
Availability - 2774
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2774
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 5
5 : USD 0.1947
50 : USD 0.1583
150 : USD 0.1428
500 : USD 0.1234
3000 : USD 0.1146
6000 : USD 0.1095

2413
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.583
10 : USD 0.3887
100 : USD 0.2714
500 : USD 0.2185
1000 : USD 0.2024
3000 : USD 0.1725
9000 : USD 0.1644

18833
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 325
Multiples : 1
325 : USD 0.3138
500 : USD 0.3025
1000 : USD 0.2926
2500 : USD 0.2839
5000 : USD 0.2764
10000 : USD 0.2696

22916
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 70
Multiples : 1
70 : USD 0.585
104 : USD 0.3932
200 : USD 0.3917
500 : USD 0.3007
1000 : USD 0.2584
2000 : USD 0.1772
3000 : USD 0.169
6000 : USD 0.1603
12000 : USD 0.1513

694
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 325
Multiples : 1
325 : USD 0.3138
500 : USD 0.3025

8574
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 325
Multiples : 1
325 : USD 0.3138
500 : USD 0.3025
1000 : USD 0.2926
2500 : USD 0.2839
5000 : USD 0.2764

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the RUR020N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUR020N02TL and other electronic components in the MOSFETs category and beyond.

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RUR020N02 Nch 20V 2A Power MOSFET Datasheet l Outline V TSMT3 20V DSS (3) R (Max.) 105mW DS(on) I 2A (1) D P 1W (2) D l l Features Inner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 Road SW Type Basic ordering unit (pcs) 3,000 Taping code TL Marking XK lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS *1 Continuous drain current I 2 A D *2 Pulsed drain current A I 6 D,pulse V Gate - Source voltage 10 V GSS *3 P 1.0 W D Power dissipation *4 0.54 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RUR020N02 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 125 C/W thJA *4 Thermal resistance, junction - ambient R - - 231 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 20 - mV/C temperature coefficient T referenced to 25C j I V = 20V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 10V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 0.3 - 1.0 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -1.9 - mV/C temperature coefficient T referenced to 25C j V =4.5V, I =2A - 75 105 GS D V =2.5V, I =2A - 95 135 GS D Static drain - source *5 V =1.8V, I =1A R - 130 185 mW GS D DS(on) on - state resistance V =1.5V, I =0.4A - 170 240 GS D V =4.5V, I =2A, T =125C - 120 170 GS D j Gate input resistannce R f = 1MHz, open drain - 24 - W G *5 V = 10V, I = 2A Transconductance g 1.8 4.2 - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (12200.8mm) www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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