X-On Electronics has gained recognition as a prominent supplier of RUU002N05T106 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUU002N05T106 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUU002N05T106 ROHM

RUU002N05T106 electronic component of ROHM
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See Product Specifications
Part No.RUU002N05T106
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 50V 0.2A
Datasheet: RUU002N05T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2794 ea
Line Total: USD 0.28 
Availability - 268
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2909
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1319
50 : USD 0.1157
150 : USD 0.1088
500 : USD 0.1002
3000 : USD 0.0842
6000 : USD 0.0818

268
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2794
10 : USD 0.1716
100 : USD 0.0803
1000 : USD 0.0671
3000 : USD 0.0473
9000 : USD 0.0429
24000 : USD 0.0429
45000 : USD 0.0407

2764
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1283
Multiples : 1
1283 : USD 0.0717
2500 : USD 0.0696

5577
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 326
Multiples : 1
326 : USD 0.1207
500 : USD 0.1102
1000 : USD 0.0946
2000 : USD 0.0895
3000 : USD 0.0837

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the RUU002N05T106 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUU002N05T106 and other electronic components in the MOSFETs category and beyond.

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1.2V Drive Nch MOSFET RUU002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T106 Basic ordering unit (pieces) 3000 1 RUU002N05 2 Absolute maximum ratings (Ta = 25C) (2) (1) (1) SOURCE Parameter Symbol Limits Unit (2) GATE 1 BODY DIODE (3) DRAIN 2 ESD PROTECTION DIODE Drain-source voltage V 50 V DSS Gate-source voltage V 8V GSS Continuous I 200 mA D Drain current *1*1 Pulsed I 800 mA DP Source current Continuous I 150 mA S *1*1 (Body Diode) Pulsed I 800 mA SP *2*2 Power dissipation P 200 mW D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw 10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Symbol Limits Unit * Channel to ambient Rth (ch-a) 625 C / W * Each terminal mounted on a recommended land. www.rohm.com 2010.06 - Rev.B 1/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs RUU002N05 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =8V, V =0V GSS GS DS Drain-source breakdown voltage V 50 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =50V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =10V, I =1mA GS (th) DS D -1.6 2.2 I =200mA, V =4.5V D GS -1.7 2.4 I =200mA, V =2.5V D GS Static drain-source on-state * R DS (on) -1.9 2.7 I =100mA, V =1.8V D GS resistance -2.0 4.0 I =40mA, V =1.5V D GS -2.4 7.2 I =20mA, V =1.2V D GS * Forward transfer admittance l Y l 0.4 - - S I =200mA, V =10V fs D DS Input capacitance C -25 - pFV =10V iss DS Output capacitance C -6 - pFV =0V oss GS Reverse transfer capacitance C -3 - pFf=1MHz rss Turn-on delay time t ** -4 - nsI =100mA, V 30V d(on) D DD Rise time t ** -6 - nsV =4.5V r GS Turn-off delay time t ** -15 - nsR =300 d(off) L Fall time t ** -55 - nsR =10 f G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward voltage V -- 1.2 VI =200mA, V =0V SD s GS *Pulsed www.rohm.com 2010.06 - Rev.B 2/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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