MTP2P50EG
Power MOSFET
2 Amps, 500 Volts, PChannel TO220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
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to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a draintosource diode with a
fast recovery time. Designed for high voltage, high speed switching
2 AMPERES, 500 VOLTS
applications in power supplies, converters and PWM motor controls,
R = 6
DS(on)
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
PChannel
offer additional safety margin against unexpected voltage transients.
D
Features
Robust High Voltage Termination
Avalanche Energy Specified
G
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
S
Diode is Characterized for Use in Bridge Circuits
I and V Specified at Elevated Temperature
DSS DS(on)
MARKING DIAGRAM
This is a PbFree Device*
AND PIN ASSIGNMENT
MAXIMUM RATINGS (T = 25C unless otherwise noted)
C 4
Drain
4
Rating Symbol Value Unit
DrainSource Voltage V 500 Vdc
DSS
DrainGate Voltage (R = 1.0 M) V 500 Vdc
DGR
GS
GateSource Voltage
TO220AB
MTP
Continuous V 20 Vdc
GS
CASE 221A
NonRepetitive (t 10 ms) V 40 Vpk
2P50EG
p GSM
STYLE 5
AYWW
Drain Current Continuous I 2.0 Adc
D
1
Drain Current Continuous @ 100C I 1.6
D
2
Drain Current Single Pulse (t 10 s) I 6.0 Apk
p DM
3
Total Power Dissipation P 75 W 1 3
D
Derate above 25C 0.6 W/C
Gate Source
2
Drain
Operating and Storage Temperature Range T , T 55 to 150 C
J stg
Single Pulse DraintoSource Avalanche E 80 mJ
AS
MTP2P50E = Device Code
Energy Starting T = 25C
J
A = Assembly Location
(V = 100 Vdc, V = 10 Vdc,
DD GS
Y = Year
I = 4.0 Apk, L = 10 mH, R = 25 )
L G
WW = Work Week
Thermal Resistance C/W G = PbFree Package
JunctiontoCase R 1.67
JC
JunctiontoAmbient R 62.5
JA
ORDERING INFORMATION
Maximum Lead Temperature for Soldering T 260 C
L
Purposes, 1/8 from case for 10 sec
Device Package Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
MTP2P50EG TO220AB 50 Units/Rail
assumed, damage may occur and reliability may be affected.
(PbFree)
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number:
January, 2015 Rev. 7 MTP2P50E/DMTP2P50EG
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage V
(BR)DSS
(V = 0 Vdc, I = 250 Adc) 500 Vdc
GS D
Temperature Coefficient (Positive) 564 mV/C
Zero Gate Voltage Drain Current I Adc
DSS
(V = 500 Vdc, V = 0 Vdc) 10
DS GS
(V = 500 Vdc, V = 0 Vdc, T = 125C) 100
DS GS J
GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc
GS DS GSS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage V
GS(th)
(V = V , I = 250 Adc) 2.0 3.0 4.0 Vdc
DS GS D
Temperature Coefficient (Negative) 4.0 mV/C
Static DrainSource OnResistance (V = 10 Vdc, I = 1.0 Adc) R 4.5 6.0
GS D DS(on)
DrainSource OnVoltage (V = 10 Vdc) V Vdc
GS DS(on)
(I = 2.0 Adc) 9.5 14.4
D
(I = 1.0 Adc, T = 125C) 12.6
D J
Forward Transconductance (V = 15 Vdc, I = 1.0 Adc) g 0.5 mhos
DS D FS
DYNAMIC CHARACTERISTICS
Input Capacitance C 845 1183 pF
iss
(V = 25 Vdc, V = 0 Vdc,
DS GS
Output Capacitance C 100 140
oss
f = 1.0 MHz)
Reverse Transfer Capacitance C 26 52
rss
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time t 12 24 ns
d(on)
Rise Time t 14 28
r
(V = 250 Vdc, I = 2.0 Adc,
DD D
V = 10 Vdc, R = 9.1 )
GS G
TurnOff Delay Time t 21 42
d(off)
Fall Time t 19 38
f
Gate Charge (See Figure 8) Q 19 27 nC
T
Q 3.7
1
(V = 400 Vdc, I = 2.0 Adc,
DS D
V = 10 Vdc)
GS
Q 7.9
2
Q 9.9
3
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1) V Vdc
SD
(I = 2.0 Adc, V = 0 Vdc)
S GS
2.3 3.5
(I = 2.0 Adc, V = 0 Vdc, T = 125C)
S GS J
1.85
Reverse Recovery Time t 223 ns
rr
(See Figure 14)
t 161
a
(I = 2.0 Adc, V = 0 Vdc,
S GS
dI /dt = 100 A/s)
S
t 62
b
Reverse Recovery Stored Charge Q 1.92 C
RR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance L nH
D
(Measured from contact screw on tab to center of die) 3.5
(Measured from the drain lead 0.25 from package to center of die) 4.5
Internal Source Inductance L 7.5 nH
S
(Measured from the source lead 0.25 from package to source bond pad)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
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2