MGSF2N02EL, MVSF2N02EL MOSFET N-Channel, SOT-23 2.8 A, 20 V www.onsemi.com These miniature surface mount MOSFETs low R assure DS(on) minimal power loss and conserve energy, making these devices ideal 2.8 A, 20 V for use in space sensitive power management circuitry. R = 85 m (max) DS(on) Features Low R Provides Higher Efficiency and Extends Battery Life DS(on) NChannel Miniature SOT23 Surface Mount Package Saves Board Space D I Specified at Elevated Temperature DSS AEC Q101 Qualified and PPAP Capable MVSF2N02EL These Devices are PbFree and are RoHS Compliant G Applications DCDC Converters Power Management in Portable and Battery Powered Products, ie: S Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MARKING DIAGRAM MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit 3 SOT23 DraintoSource Voltage V 20 Vdc DSS NT M CASE 318 1 GatetoSource Voltage Continuous V 8.0 Vdc STYLE 21 GS 2 1 Drain Current A Continuous T = 25C I 2.8 A D Single Pulse (t = 10 s) I 5.0 xxx = Specific Device Code p DM M = Date Code Total Power Dissipation T = 25C P 1.25 W A D = PbFree Package Operating and Storage Temperature T , T 55 to C J stg Range 150 Thermal Resistance R C/W JA PIN ASSIGNMENT JunctiontoAmbient (Note 1) 100 Thermal Resistance 3 JunctiontoAmbient (Note 2) 300 Drain Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from case for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 1. 1 Pad, t < 10 sec. Gate Source 2. Min pad, steady state. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: May, 2019 Rev. 5 MGSF2N02EL/DMGSF2N02EL, MVSF2N02EL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V (BR)DSS (V = 0 Vdc, I = 10 Adc) 20 Vdc GS D Temperature Coefficient (Positive) 22 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateSource Leakage Current (V = 8.0 Vdc, V = 0 Vdc) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 3) GateSource Threshold Voltage V GS(th) (V = V , I = 250 Adc) 0.5 1.0 Vdc DS GS D Threshold Temperature Coefficient (Negative) 2.3 mV/C Static DraintoSource OnResistance R m DS(on) (V = 4.5 Vdc, I = 3.6 A) 78 85 GS D (V = 2.5 Vdc, I = 3.1 A) 105 115 GS D DYNAMIC CHARACTERISTICS Input Capacitance C 150 pF iss (V = 5.0 Vdc, V = 0 V, DS GS Output Capacitance C 130 oss f = 1.0 MHz) Transfer Capacitance C 45 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 6.0 ns d(on) Rise Time t 95 r (V = 16 Vdc, I = 2.8 Adc, DD D V = 4.5 V, R = 2.3 ) TurnOff Delay Time gs G t 28 d(off) Fall Time t 125 f Gate Charge Q 3.5 nC T (V = 16 Vdc, I = 1.75 Adc, DS D Q 0.6 gs V = 4.0 Vdc) (Note 3) GS Q 1.5 gd SOURCEDRAIN DIODE CHARACTERISTICS Forward Voltage V V SD (I = 1.0 Adc, V = 0 Vdc) (Note 3) 0.76 1.2 S GS Reverse Recovery Time t 104 ns rr (I = 1.0 Adc, V = 0 Vdc, S GS t 42 a dl / dt = 100 A/ s) (Note 3) S t 62 b Reverse Recovery Stored Charge Q 0.20 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device Package Shipping MGSF2N02ELT1G SOT23 3,000 / Tape & Reel (PbFree) MVSF2N02ELT1G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. www.onsemi.com 2