X-On Electronics has gained recognition as a prominent supplier of MTM982400BBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. MTM982400BBF MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MTM982400BBF Panasonic

MTM982400BBF electronic component of Panasonic
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See Product Specifications
Part No.MTM982400BBF
Manufacturer: Panasonic
Category: MOSFETs
Description: MOSFET NCH MOS FET FLT LD 5.0x6.0mm
Datasheet: MTM982400BBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 8.6281
10 : USD 3.12
25 : USD 3.0239
100 : USD 2.5109
500 : USD 2.0622
1000 : USD 1.7096
3000 : USD 1.56
6000 : USD 1.528
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MTM982400BBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTM982400BBF and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF MTM982400BBF Silicon N-channel MOSFET Unit: mm 5.0 For switching 0.4 0.22 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 29 m (VGS = 5.0 V) Halogen-free / RoHS compliant 1 234 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.95 1.27 Marking Symbol: CA 1. Source 5. Drain 2. Source 6. Drain Packaging 3. Source 7. Drain Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 4. Gate 8. Drain Panasonic SO8-F1-B JEITA SC-111AA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Internal Connection Drain-source Voltage VDS 40 V (D) (D) (D) (D) Gate-source Voltage VGS 20 V 8 7 6 5 Drain Current ID 7 A Drain Current (Pulsed) IDp 28 A *1 PD 2 W Total Power dissipation Channel Temperature Tch 150 C Operating Ambient Temperature Topr -40 to + 85 C Storage Temperature Range Tstg -55 to +150 C 1 2 3 4 Note: *1 Measuring on ceramic board at 50 mm 50 mm 1.0 mm. (S) (S) (S) (G) Pin Name 1. Source 5. Drain 2. Source 6. Drain 3. 7. Source Drain 4. Gate 8. Drain Page 1 of 6 Established : 2007-12-18 Revised : 2013-09-10 5.0 6.0Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF Electrical Characteristics Ta = 25 C 3C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 40 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 A A Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 Gate-source threshold Voltage Vth ID = 1.0 mA, VDS = 10.0 V 1.0 2.5 V RDS(on)1 ID = 7 A, VGS = 10 V 16 23 *1 m Drain-source On-state Resistance RDS(on)2 ID = 3.5 A, VGS = 5.0 V 29 40 *1 Yfs ID = 7 A, VDS = 10 V 4.0 S Forward transfer admittance Input Capacitance Ciss 1 750 Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 150 pF Reverse Transfer Capacitance Crss 90 *1,*2 td(on) 17 Turn-on Delay Time VDD = 25 V, VGS = 0 to 10 V, ns *1,*2 tr ID = 3.5 A 9 Rise Time *1,*2 Turn-off Delay Time td(off) VDD = 25 V, VGS = 10 to 0 V, 94 ns *1,*2 tf ID = 3.5 A 33 Fall Time 1. Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2 of 6 Established : 2007-12-18 Revised : 2013-09-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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