Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF MTM982400BBF Silicon N-channel MOSFET Unit: mm 5.0 For switching 0.4 0.22 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 29 m (VGS = 5.0 V) Halogen-free / RoHS compliant 1 234 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.95 1.27 Marking Symbol: CA 1. Source 5. Drain 2. Source 6. Drain Packaging 3. Source 7. Drain Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 4. Gate 8. Drain Panasonic SO8-F1-B JEITA SC-111AA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Internal Connection Drain-source Voltage VDS 40 V (D) (D) (D) (D) Gate-source Voltage VGS 20 V 8 7 6 5 Drain Current ID 7 A Drain Current (Pulsed) IDp 28 A *1 PD 2 W Total Power dissipation Channel Temperature Tch 150 C Operating Ambient Temperature Topr -40 to + 85 C Storage Temperature Range Tstg -55 to +150 C 1 2 3 4 Note: *1 Measuring on ceramic board at 50 mm 50 mm 1.0 mm. (S) (S) (S) (G) Pin Name 1. Source 5. Drain 2. Source 6. Drain 3. 7. Source Drain 4. Gate 8. Drain Page 1 of 6 Established : 2007-12-18 Revised : 2013-09-10 5.0 6.0Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF Electrical Characteristics Ta = 25 C 3C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 40 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 A A Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 Gate-source threshold Voltage Vth ID = 1.0 mA, VDS = 10.0 V 1.0 2.5 V RDS(on)1 ID = 7 A, VGS = 10 V 16 23 *1 m Drain-source On-state Resistance RDS(on)2 ID = 3.5 A, VGS = 5.0 V 29 40 *1 Yfs ID = 7 A, VDS = 10 V 4.0 S Forward transfer admittance Input Capacitance Ciss 1 750 Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 150 pF Reverse Transfer Capacitance Crss 90 *1,*2 td(on) 17 Turn-on Delay Time VDD = 25 V, VGS = 0 to 10 V, ns *1,*2 tr ID = 3.5 A 9 Rise Time *1,*2 Turn-off Delay Time td(off) VDD = 25 V, VGS = 10 to 0 V, 94 ns *1,*2 tf ID = 3.5 A 33 Fall Time 1. Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2 of 6 Established : 2007-12-18 Revised : 2013-09-10