X-On Electronics has gained recognition as a prominent supplier of SCT3105KRC14 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3105KRC14 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3105KRC14 ROHM

SCT3105KRC14 electronic component of ROHM
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See Product Specifications
Part No.SCT3105KRC14
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Datasheet: SCT3105KRC14 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.7665 ea
Line Total: USD 15.77 
Availability - 92
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
92
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 15.7665
10 : USD 14.26
25 : USD 14.2025
50 : USD 14.191
240 : USD 14.1795
2640 : USD 14.168

19
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5
Multiples : 1
5 : USD 18.7405

177
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2
Multiples : 1
2 : USD 24.5375
5 : USD 20.8
10 : USD 19.9875
50 : USD 16.25
100 : USD 15.2425

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3105KRC14 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3105KRC14 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3105KR Datasheet N-channel SiC power MOSFET lOutline TO-247-4L V 1200V DSS R (Typ.) 105m DS(on) *1 I 24A D P 134W D (1) (2)(3)(4) lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Please note Driver Source and Power Source are 5) Simple to drive not exchangeable. Their exchange might lead to malfunction. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Tube lApplication Solar inverters Reel size (mm) - DC/DC converters Tape width (mm) - Type Switch mode power supplies Basic ordering unit (pcs) 30 Induction heating Taping code C14 Motor drives Marking SCT3105KR lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source Voltage 1200 V DSS *1 T = 25C I 24 A c D Continuous Drain current *1 T = 100C 17 A I c D *2 Pulsed Drain current I 60 A D,pulse Gate - Source voltage (DC) V -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300ns) V -4 to +26 V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50254-SCT3105KR 2019 ROHM Co., Ltd. All rights reserved. 1/12 31.Jul.2019 - Rev.001 TSZ2211114001Datasheet SCT3105KR lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 1200 - - V (BR)DSS j voltage T = -55C 1200 - - j V = 0V, V =1200V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j Gate - Source I V = +22V, V = 0V - - 100 nA GSS+ GS DS leakage current Gate - Source I V = V = 0V -4V, - - -100 nA GSS- GS DS leakage current V V = 10V, I = Gate threshold voltage 3.81mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 7.6A GS D Static Drain - Source *5 T = 25C - 105 137 m R j DS(on) on - state resistance T = 150C - 179 - j R Gate input resistance f = 1MHz, open drain - 13 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - 0.86 1.12 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit -1 -4 R C 1.1410 5.0210 th1 th1 -1 -3 R 5.0710 K/W C 4.9110 Ws/K th2 th2 -1 -2 R C 2.5110 4.9910 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50254-SCT3105KR 2019 ROHM Co., Ltd. All rights reserved. 2/12 31.Jul.2019 - Rev.001 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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