MTM232230LBF Panasonic

Doc No. TT4-EA-12901 Revision. 3 Product Standards MOS FET MTM232230LBF MTM232230LBF Silicon N-channel MOS FET Unit : mm 2.0 For switching 0.3 0.15 3 Features Low drain-source On-state resistance : RDS(on) typ = 20 m (VGS = 4.0 V) Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 12 Marking Symbol : BK 0.9 (0.65)(0.65) Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 C Panasonic SMini3-G1-B JEITA SC-70 Drain-source Voltage VDS 20 Code SOT-323 V Gate-source Voltage VGS 10 Drain current ID 4.5 A *1 IDp 18 A Internal Connection Peak drain current *2 PD 500 mW Power dissipation (D) Channel temperature Tch 150 C 3 Operating ambient temperature Topr -40 to + 85 C Storage Temperature Range Tstg -55 to +150 C Note) *1 Pulse width 10 s, Duty cycle 1 % *2 Measuring on ceramic board at 40 38 0.1 mm Absolute maximum rating PD without heat sink shall be made 150 mW. 1 2 (G) (S) Pin Name 1. Gate 2. Source 3. Drain Page 1of 6 Established : 2010-12-15 Revised : 2013-07-01 1.25 2.1Doc No. TT4-EA-12901 Revision. 3 Product Standards MOS FET MTM232230LBF Electrical Characteristics Ta = 25 C 3 C Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 V 20 V Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 V 1.0 A Gate-source cutoff current IGSS VGS = 8 V, VDS = 0 V 10 A Gate threshold voltage Vth ID = 1.0 mA, VDS = 10.0 V 0.4 0.85 1.3 V RDS(ON)1 ID = 1 A, VGS = 4 V 20 28 *1 m Drain-source ON resistance RDS(ON)2 ID = 0.6 A, VGS = 2.5 V 26 40 *1 |Yfs| ID = 1 A, VDS = 10 V, f = 1 kHz 3.5 S Forward transfer admittance Short-circuit input capacitance (Common source) Ciss 1 200 Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0, f = 1 MHz 85 pF Reverse transfer capacitance (Common source) Crss 80 VDD = 10 V, VGS = 0 to 4 V *2 ton 16 ns Turn-on Time ID = 1 A VDD = 10 V, VGS = 4 to 0 V *2 toff 220 ns Turn-off Time ID = 1 A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test : Pulse width < 300 sDuty cycle < 2 % *2 Turn-on and Turn-off test circuit Page 2 of 6 Established : 2010-12-15 Revised : 2013-07-01