Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
MTM232230LBF
Silicon N-channel MOS FET
Unit : mm
2.0
For switching
0.3 0.15
3
Features
Low drain-source On-state resistance : RDS(on) typ = 20 m (VGS = 4.0 V)
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
12
Marking Symbol :
BK 0.9
(0.65)(0.65)
Packaging
1.3
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25 C Panasonic SMini3-G1-B
JEITA SC-70
Drain-source Voltage VDS 20 Code SOT-323
V
Gate-source Voltage VGS 10
Drain current ID 4.5 A
*1
IDp 18 A Internal Connection
Peak drain current
*2
PD 500 mW
Power dissipation
(D)
Channel temperature Tch 150 C 3
Operating ambient temperature Topr -40 to + 85 C
Storage Temperature Range Tstg -55 to +150
C
Note) *1 Pulse width 10 s, Duty cycle 1 %
*2 Measuring on ceramic board at 40 38 0.1 mm
Absolute maximum rating PD without heat sink shall be made 150 mW.
1 2
(G) (S)
Pin Name
1. Gate
2. Source
3. Drain
Page 1of 6
Established : 2010-12-15
Revised : 2013-07-01
1.25
2.1Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
Electrical Characteristics Ta = 25 C 3 C
Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 V 20 V
Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 V 1.0 A
Gate-source cutoff current IGSS VGS = 8 V, VDS = 0 V 10 A
Gate threshold voltage Vth ID = 1.0 mA, VDS = 10.0 V 0.4 0.85 1.3 V
RDS(ON)1 ID = 1 A, VGS = 4 V 20 28
*1
m
Drain-source ON resistance
RDS(ON)2
ID = 0.6 A, VGS = 2.5 V 26 40
*1
|Yfs| ID = 1 A, VDS = 10 V, f = 1 kHz 3.5 S
Forward transfer admittance
Short-circuit input capacitance (Common source) Ciss 1 200
Short-circuit output capacitance (Common source)
Coss VDS = 10 V, VGS = 0, f = 1 MHz 85 pF
Reverse transfer capacitance (Common source) Crss 80
VDD = 10 V, VGS = 0 to 4 V
*2
ton 16 ns
Turn-on Time
ID = 1 A
VDD = 10 V, VGS = 4 to 0 V
*2
toff 220 ns
Turn-off Time
ID = 1 A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test : Pulse width < 300 sDuty cycle < 2 %
*2 Turn-on and Turn-off test circuit
Page 2 of 6
Established : 2010-12-15
Revised : 2013-07-01