Doc No. TT4-EA-12408 Revision. 2 Product Standards MOS FET MTM78E2B0LBF MTM78E2B0LBF Gate Resistor installed Dual N-Channel MOS Type Unit: mm 2. 0 For lithium-ion secondary battery protection circuit 0.2 0.13 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 21.5 m (VGS =4.0 V) Halogen-free / RoHS compliant 12 3 4 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0. 7 0.5 1. Source 1 5. Drain Marking Symbol: 5A 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 8. Drain Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Panasonic WSMini8-F1-B JEITA SC-113E Code Internal Connection Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit (D) (D) (D) (D) Drain-source Voltage VDS 20 V 8 7 6 5 FET1 Gate-source Voltage VGS V 12 FET2 Drain current ID 4.0 A *1 IDp 40 A Peak drain current *2 PD1 700 R = R = g g Total power dissipation mW *3 1 k 1 k PD2 150 Overall Channel temperature Tch 150 C 1 2 3 4 Operating ambient temperature Topr -40 to +85 C (S1) (G1) (S2) (G2) Storage temperature Tstg -55 to +150 C Note) *1 t = 10 s, Duty Cycle < 1 % Pin Name Ceramic substrate (70 70 t 1.0 mm) 1. Source 1 5. Drain *2 Dual operating *3 Stand-alone (without the substrate) 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 8. Drain Page 1 of 6 Established : 2010-03-03 Revised : 2013-10-15 1.7 2.1Doc No. TT4-EA-12408 Revision. 2 Product Standards MOS FET MTM78E2B0LBF Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1.0 mA, VGS = 0 20 V Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 1.0 A Gate-source cutoff current IGSS A VGS = 12 V, VDS = 0 10 Gate threshold voltage Vth ID = 1.0 mA, VDS = 10 V 0.40 0.85 1.30 V RDS(ON)1 ID = 2.0 A, VGS = 4.0 V 21.5 25.0 m Drain-source ON resistance RDS(ON)2 ID = 1.5 A, VGS = 3.0 V 26.0 30.0 m RDS(ON)3 ID = 1.0 A, VGS = 2.5 V 30.0 36.0 m Forward transfer admittance Yfs ID = 1.0 A, VDS = 10 V 1.0 S Short-circuit input capacitance (Common source) Ciss 1100 pF Short-circuit output capacitance (Common source) VDS = 10 V, VGS = 0, f = 1 MHz 75 pF Coss Reverse transfer capacitance (Common source) Crss 70 pF *1, *2 td(on) 0.2 s Turn-on delay time *1, *2 VDD = 10 V, VGS = 4 V, tr 0.5 s Rise time *1, *2 td(off) ID = 1.0 A, RL = 10 2.0 s Turn-off delay time *1, *2 tf 1.5 s Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 t = 10 s, Duty Cycle < 1 % *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2of 6 Established : 2010-03-03 Revised : 2013-10-15