X-On Electronics has gained recognition as a prominent supplier of SI4404DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4404DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4404DY-T1-E3 Vishay

SI4404DY-T1-E3 electronic component of Vishay

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Part No.	SI4404DY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 23A 3.5W N-channel JFET, Vgs max -20V, Idss max 1mA, TO-92 package.
Datasheet:	SI4404DY-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 0.6967 ea
Line Total: USD 1741.75

Availability - 0

MOQ: 2500 Multiples: 1
Pack Size: 1

SI4404DY-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 2500 Multiples : 1	2500 : USD 0.6967

We are delighted to provide the SI4404DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4404DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4404DY-T1-E3 is a Power MOSFET manufactured by Vishay. It is a N-channel enhancement mode device with a maximum drain-source voltage of 400V and a continuous drain current of 8.2A. The device has a low threshold voltage and extremely low on-resistance which makes it suitable for high-efficiency and high-speed switching applications such as DC/DC converters and power supplies. The device is housed in an E3 package and comes with a wide variety of package pin counts.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 23 A 23 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 6.5 mOhms 6.5 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 3.5 W 3.5 W
Mounting Style smd/smt smd/smt
Package / Case SOIC - 8 Narrow SOIC - 8 Narrow
Packaging Reel Reel
Channel Mode enhancement enhancement
Tradename trenchfet trenchfet
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 40 ns 40 ns
Rise Time 15 ns 15 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 105 ns 105 ns