X-On Electronics has gained recognition as a prominent supplier of SCT3040KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3040KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3040KLGC11 ROHM

SCT3040KLGC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3040KLGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
Datasheet: SCT3040KLGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 34.125 ea
Line Total: USD 68.25 
Availability - 281
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
32
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 36.916
10 : USD 36.52
25 : USD 29.073
450 : USD 29.062

431
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 35.621
10 : USD 35.3153

281
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 34.125
5 : USD 31.3625
10 : USD 30.3875
50 : USD 23.5625
100 : USD 22.75
200 : USD 22.425

168
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 35.621
10 : USD 35.3153
60 : USD 35.0223
125 : USD 32.6908

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3040KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3040KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3040KL Datasheet N-channel SiC power MOSFET lOutline TO-247N V 1200V DSS R (Typ.) 40mW DS(on) I 55A D (3) P 262W (2) D (1) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating RoHS compliant Packing Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3040KL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *1 T = 25C 55 A I c D Continuous drain current *1 T = 100C I 39 A c D *2 Pulsed drain current 137 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V -4 to +26 V surge GSS surge *4 Recommended Drive Voltage 0 / +18 V V GS op T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3040KL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001Datasheet SCT3040KL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - nA -100 GSS - GS DS V V = 10V, I = 10mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 20A GS D Static drain - source *5 T = 25C R - 40 52 m W j DS(on) on - state resistance T = 125C - 60 - j Gate input resistance R f = 1MHz, open drain - 7 - W G www.rohm.com TSQ50211-SCT3040KL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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