X-On Electronics has gained recognition as a prominent supplier of SCT3080ALGC11 MOSFET across the USA, India, Europe, Australia, and various other global locations. SCT3080ALGC11 MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SCT3080ALGC11 ROHM

SCT3080ALGC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3080ALGC11
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET N-Ch 650V 30A Silicon Carbide SiC
Datasheet: SCT3080ALGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 9.7825 ea
Line Total: USD 48.91

Availability - 707
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
407
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 30
Multiples : 30
30 : USD 7.527
90 : USD 7.527
150 : USD 7.527
300 : USD 7.527
600 : USD 7.527

873
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 7.67

1868
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 10.005
25 : USD 8.119
100 : USD 7.452
250 : USD 7.452
450 : USD 7.245
900 : USD 7.176

436
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 9
Multiples : 1
9 : USD 11.1622
25 : USD 10.6467
50 : USD 10.2184
100 : USD 9.8582
250 : USD 9.5523

221
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 9
Multiples : 1
9 : USD 11.1622
25 : USD 10.6467
50 : USD 10.2184
100 : USD 9.8582

707
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 5
Multiples : 1
5 : USD 9.7175
10 : USD 7.9462
50 : USD 7.5562
100 : USD 6.9387
200 : USD 6.5975

291
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 30
Multiples : 30
30 : USD 11.4916
60 : USD 10.7077
120 : USD 10.1136
180 : USD 9.6525

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3080ALGC11 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3080ALGC11 and other electronic components in the MOSFET category and beyond.

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SCT3080AL Datasheet N-channel SiC power MOSFET lOutline TO-247N V 650V DSS R (Typ.) 80mW DS(on) I 30A D (3) P 134W (2) D (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3080AL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 650 V DSS *1 T = 25C I 30 A c D Continuous drain current *1 T = 100C I 21 A c D *2 Pulsed drain current 75 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V V -4 to +26 surge GSS surge *4 Recommended Drive Voltage V 0 / +18 V GS op T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3080AL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001Datasheet SCT3080AL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.86 1.12 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - nA -100 GSS - GS DS V V = 10V, I = 5mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 10A GS D Static drain - source *5 T = 25C R - 80 104 m W j DS(on) on - state resistance T = 125C - 105.6 - j Gate input resistance R f = 1MHz, open drain - 13 - W G www.rohm.com TSQ50211-SCT3080AL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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