X-On Electronics has gained recognition as a prominent supplier of SCT3080KL MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3080KL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SCT3080KL ROHM

SCT3080KL electronic component of ROHM
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See Product Specifications
Part No.SCT3080KL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, N-CH, 31A, 1.2KV, TO-247N
Datasheet: SCT3080KL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 24.0313 ea
Line Total: USD 24.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 24.0313
5 : USD 21.8858
10 : USD 20.6216
50 : USD 19.6879
100 : USD 18.9354
250 : USD 17.3313

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3080KL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3080KL and other electronic components in the MOSFETs category and beyond.

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SiC Power Devices and Modules Application Note Issue of August 2014 14103EBY01 Contents 1. SiC Semiconductors .............................................................................................................................................. 3 1.1 Property of SiC material .......................................................................................................................... 3 1.2 Advantages of SiC material for power device applications......................................................... 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .............................................................................. 5 2.1 Device structure and characteristics .................................................................................................... 5 2.2 Forward characteristics of SiC-SBD ................................................................................................... 5 2.3 Reverse recovery characteristics of SiC-SBD .................................................................................. 6 3. Characteristics of SiC-MOSFET ...................................................................................................................... 8 3.1 Device structure and characteristics .................................................................................................... 8 3.2 Specific on-resistance ............................................................................................................................... 9 3.3 Vd-Id characteristics .............................................................................................................................. 10 3.4 Gate voltage Vgs to drive SiC-MOSFET and Rdson ................................................................. 10 3.5 Vg-Id characteristics .............................................................................................................................. 11 3.6 Turn-on characteristics.......................................................................................................................... 12 3.7 Turn-off characteristics ......................................................................................................................... 13 3.8 Internal gate resistance .......................................................................................................................... 14 3.9 Gate drive circuit .................................................................................................................................... 15 3.10 Forward characteristics of body diode and reverse conduction .......................................... 15 3.11 Reverse recovery characteristics of body diode ....................................................................... 17 4. Characteristics of SiC power modules ......................................................................................................... 18 4.1 Characteristics of SiC power module ............................................................................................... 18 4.2 Topologies ................................................................................................................................................. 18 4.3 Switching characteristics ...................................................................................................................... 19 4.3.1 Id and Tj dependencies of switching characteristics .......................................................... 19 4.3.2 Gate resistance dependency of switching characteristics ................................................. 20 4.3.3 Gate voltage dependency of switching characteristics ...................................................... 21 4.4 Comparison of switching loss with Si-IGBT power modules ................................................. 22 4.4.1 Comparison of total switching loss with Si-IGBT power modules ............................... 22 4.4.2 Comparison of diode reverse recovery loss (Err) with Si-IGBT power modules .... 22 4.4.3 Comparison of turn-on loss (Eon) with Si-IGBT ................................................................ 23 4.4.4 Comparison of turn-off loss (Eoff) with Si-IGBT power modules ............................... 24 5. Reliability of SiC-SBD ..................................................................................................................................... 25 5.1 dV/dt and dI/dt break-down ................................................................................................................ 25 5.2 Results of SiC-SBD reliability tests ................................................................................................. 25 6. Reliability of SiC-MOSFET ............................................................................................................................ 26 6.1 Reliability of gate insulating layer .................................................................................................... 26 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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