X-On Electronics has gained recognition as a prominent supplier of SCT3060ALGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3060ALGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3060ALGC11 ROHM

SCT3060ALGC11 electronic component of ROHM
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Part No.SCT3060ALGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS
Datasheet: SCT3060ALGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.608 ea
Line Total: USD 14.61 
Availability - 1344
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1344
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 14.608
10 : USD 12.441
25 : USD 9.57
100 : USD 8.943
450 : USD 8.844

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3060ALGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3060ALGC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3060AL Datasheet N-channel SiC power MOSFET lOutline TO-247N V 650V DSS R (Typ.) 60mW DS(on) I 39A D (3) P 165W (2) D (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3060AL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 650 V DSS *1 T = 25C I 39 A c D Continuous drain current *1 T = 100C I 27 A c D *2 Pulsed drain current 97 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V V -4 to +26 surge GSS surge *4 Recommended Drive Voltage V 0 / +18 V GS op T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3060AL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001Datasheet SCT3060AL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.70 0.91 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - nA -100 GSS - GS DS V V = 10V, I = 6.67mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 13A GS D Static drain - source *5 T = 25C R - 60 78 m W j DS(on) on - state resistance T = 125C - 79.2 - j Gate input resistance R f = 1MHz, open drain - 12 - W G www.rohm.com TSQ50211-SCT3060AL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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