X-On Electronics has gained recognition as a prominent supplier of RT1A060APTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RT1A060APTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RT1A060APTR ROHM

Hot RT1A060APTR electronic component of ROHM
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See Product Specifications
Part No.RT1A060APTR
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET P-CH Si 12V 6A Automotive 8-Pin TSST T/R
Datasheet: RT1A060APTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
186: USD 0.2304 ea
Line Total: USD 42.85 
Availability - 2817
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 186  Multiples: 1
Pack Size: 1
Availability Price Quantity
2211
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4146
10 : USD 0.268
3000 : USD 0.2425
6000 : USD 0.2264
9000 : USD 0.216

2817
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 186
Multiples : 1
186 : USD 0.2304
500 : USD 0.2116
1000 : USD 0.2065
2000 : USD 0.2047

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Power Dissipation
Pin Count
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Polarity
Drain-Source On-Volt
Number Of Elements
Gate-Source Voltage Max
Continuous Drain Current
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RT1A060APTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RT1A060APTR and other electronic components in the MOSFETs category and beyond.

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RT1A060AP Datasheet Pch -12V -6A Middle Power MOSFET llOutline TSST8 V -12V DSS R (Max.) 19m DS(on) I 6A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SG llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 6 A D *1 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 -8 V GSS *2 P 1.25 W D Power dissipation *3 P 0.6 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RT1A060AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 208 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source leakage current I V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -6A - 14 19 GS D V = -2.5V, I = -3A - 17 24 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -3A - 22 33 GS D V = -1.5V, I = -1.2A - 27 54 GS D R Gate input resistance f = 1MHz, open drain - 8 - G Forward Transfer *4 Y V = -6V, I = -6A 9 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (20x20x0.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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