RTQ025P02TR ROHM

RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 z External dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX z Features 2.9 0.85 1.9 1) Low On-resistance.(140m at 2.5V) 0.95 0.95 0.7 (6) (5) (4) 2) High Power Package. 3) High speed switching. 0~0.1 (1) (2) (3) 4) Low voltage drive.(2.5V) 1pin mark 0.16 0.4 Each lead has same dimensions z Applications Abbreviated symbol : TQ DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Code TR Type Basic ordering unit 3000 (pieces) 2 RTQ025P02 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 20 V Gatesource voltage VGSS 12 V Continuous ID 2.5 A Drain current 1 Pulsed IDP 10 A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 W Total power dissipation PD 1.25 Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTQ025P02 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=12V, VDS=0V V(BR)DSS 20 V Drain-source breakdown voltage ID=1 , VmA, GS=0V A Zero gate voltage drain current IDSS 1 VDS=20V, VGS=0V Gate threshold voltage VDS=10V, ID=1mA VGS(th) 0.7 2.0 V 72 100 m ID=2.5A, VGS=4.5V 80 110 m ID=2.5A, VGS=4V Static drain-source on-state RDS(on) resistance 140 190 m ID=1.2A, VGS=2.5V Foward transfer admittance 2.0 S VDS=10V, ID=1.2A Yfs Input capacitance Ciss 580 pF VGS=0V VDS=10V, pF Output capacitance 110 Coss f=1MHz Reverse transfer capacitance pF Crss 80 Turn-on delay time td(on) 12 ns ID=1.2A Rise time tr 20 ns VDD 15V VGS=4.5V Turn-off delay time td(off) 40 ns RL=12.5 RG=10 Fall time tf 17 ns Total gate charge Qg 6.4 nC VDD 15V Qgs 1.4 nC Gate-source charge VGS=4.5V ID=2.5A Gate-drain charge Qgd 1.9 nC PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4