X-On Electronics has gained recognition as a prominent supplier of RSR020N06TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR020N06TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR020N06TL ROHM

RSR020N06TL electronic component of ROHM
RSR020N06TL ROHM
RSR020N06TL MOSFETs
RSR020N06TL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSR020N06TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 60V 2A 3PIN
Datasheet: RSR020N06TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2795 ea
Line Total: USD 1.4 
Availability - 1047
Ship by Thu. 27 Mar to Tue. 01 Apr
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1047
Ship by Thu. 27 Mar to Tue. 01 Apr
MOQ : 5
Multiples : 5
5 : USD 0.2795
50 : USD 0.2196
150 : USD 0.1662
500 : USD 0.125
3000 : USD 0.1139
6000 : USD 0.1073

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSR020N06TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR020N06TL and other electronic components in the MOSFETs category and beyond.

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RSR020N06 Datasheet Nch 60V 2A Small Signal MOSFET llOutline SOT-346T V 60V DSS SC-96 R (Max.) 170m DS(on) TSMT3 I 2A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking PZ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 8 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170207 - Rev.002 Not Recommended for New Designs RSR020N06 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 2A - 120 170 GS D Static drain - source *4 R V = 4.5V, I = 2A - 140 195 m DS(on) GS D on - state resistance V = 4.0V, I = 2A - 150 210 GS D R Gate resistance f = 1MHz, open drain - 3.0 - G Forward Transfer *4 Y V = 10V, I = 2A 1.3 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170207 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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